IS43TR16256A-125KBL vs IS43TR16256AL-107MBLI 对比

详细并排对比 IS43TR16256A-125KBL 出自 ISSI, Integrated Silicon Solution Inc 和 IS43TR16256AL-107MBLI 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

ISSI, Integrated Silicon Solution Inc
IS43TR16256A-125KBL IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI

IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI

IS43TR16256A-125KBL ✓ 量产中
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-107MBLI ✓ 量产中

规格对比

参数 IS43TR16256A-125KBL IS43TR16256AL-107MBLI
品牌 ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $19.09 $2.00
存储器类型 DDR3 SDRAM DDR3L SDRAM
存储容量 4Gbit (256M x 16) 4 Gbit
数据速率 1600MT/s 1866 Mbps
Clock Frequency 800 MHz —
Access Time 20 ns 20 ns
Supply Voltage (VDD) 1.5V ± 0.075V —
Supply Voltage (VDDQ) 1.5V ± 0.075V —
CAS 延迟 11 —
Burst Length 8 (with burst chop 4) 8 and 4
封装 96-TWBGA (9x13mm) —
安装类型 Surface Mount Surface Mount
工作温度 0°C to +95°C (Tc) [DATA_NEEDED: operating temperature range]
RoHS Compliant —
引脚数 96 —
存储组织 256M x 16 256M x 16
Clock Speed — 933 MHz
电源电压 — 1.35V (backward compatible to 1.5V)
封装 / 外壳 — 96-TWBGA (9x13mm)
Number of Banks — 8
On-Die Termination — Yes
RoHS 状态 — Compliant
Memory Interface — Parallel

数据手册与资源

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