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ISSI, Integrated Silicon Solution Inc

IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI

料号: IS43TR16256A-125KBL ✓ 量产中
有现货 1-3 个工作日内发货
1.5V ± 0.075V Vdss 96-TWBGA (9x13mm) Package 800 MHz Speed DDR3 SDRAM Memory
低至 $19.0909 USD / 件
最小起订量: 1 |
价格更新于: 2026-08-21
批量定价
数量 单价 小计
1 $32.7273 $32.73
10 $23.6364 $236.36
100 $20.9091 $2,090.91
500 $20 $10,000.00
1,000 $19.0909 $19,090.90
ℹ️ 所有价格均以 USD 计价

IS43TR16256A-125KBL 概述

The IS43TR16256A-125KBL is a 4Gbit DDR3 SDRAM organized as 256M x 16, manufactured by Integrated Silicon Solution Inc (ISSI). It operates at a standard voltage of 1.5V (VDD and VDDQ) with a data rate of 1600MT/s (800 MHz clock), and is available in a 96-ball TWBGA (9x13mm) package. This memory IC is designed for high-speed data transfer in computing, networking, and industrial applications.

DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to DDR2. It is a key component in systems requiring high bandwidth and low latency, such as servers, routers, and embedded processors. DDR3 operates at lower voltages (1.5V or 1.35V for DDR3L) than previous generations, reducing power consumption.

Key features include a 4Gbit density, 16-bit I/O width, 800 MHz clock frequency, and a CAS latency of 11 (CL=11) at 1600MT/s. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). It also features auto refresh and self refresh modes for power saving. The 96-ball TWBGA package provides a compact footprint suitable for space-constrained designs.

The IS43TR16256A-125KBL uses a high-performance CMOS process and includes a DLL (Delay-Locked Loop) for precise timing alignment. It supports a burst length of 8 with a burst chop of 4, and features programmable read and write latencies. The device also includes a temperature-compensated self-refresh (TCSR) mode to reduce power consumption at high temperatures.

Typical applications include main memory for embedded systems, networking equipment (routers, switches), industrial PCs, and high-performance computing modules. Its 1.5V operation and 1600MT/s speed make it suitable for a wide range of DDR3-based designs.

When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The device requires a 1.5V supply and a separate VDDQ supply, both with tight tolerance (±0.075V).

直接替换替代料: IS43TR16256A-125KBL ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: IS43TR16256A-125KBL (相同外形与封装尺寸) ——差异在于 Data Rate, Operating Temperature, Package, Supply Voltage, Burst Length.

ISSI, Integrated Silicon Solution Inc
Data Rate: 1866 Mbps
Supply Voltage: 1.35V (backward compatible to 1.5V)
Burst Length: 8 and 4
对比 IS43TR16256A-125KBL →
ISSI, Integrated Silicon Solution Inc
Data Rate: 1600 Mbps
Operating Temperature: 0°C ~ 95°C
Supply Voltage: 1.35V (backward compatible to 1.5V)
对比 IS43TR16256A-125KBL →
Samsung Electronics
Data Rate: 2133 Mb/s per pin
Operating Temperature: 0°C to +85°C
Package: 96FBGA
对比 IS43TR16256A-125KBL →
Winbond
Data Rate: 1866 MT/s
Operating Temperature: -40°C to +95°C
Package: 96-VFBGA (7.5x13 mm)
对比 IS43TR16256A-125KBL →
Winbond
Data Rate: 800 MHz (DDR3L-1600)
Operating Temperature: -40°C to +95°C (TCASE)
Package: 96-VFBGA (7.5x13mm)
对比 IS43TR16256A-125KBL →

快速对比工具——选择替代料号进行并排对比:

IS43TR16256AL-125KBL

ISSI, Integrated Silicon Solution Inc
SDRAM - DDR3L · 4Gbit (256M x 16) · Parallel · 800 MHz · 20 ns · 1.35V (backward compatible to 1.5V) · 96-TWBGA (9x13mm) · Surface Mount

✓ 有现货

$5.6 / 个

查看数据手册 →

MT41K256M16TW-093:P

Micron Technology
SDRAM - DDR3L · 4 Gbit · 256 M x 16 · 16 bit · 1.066 GHz · 20 ns · 1.35 V (1.5 V compatible) · 96-FBGA (8x14)

✓ 有现货

$15.5 / 个

查看数据手册 →

MT41K256M16HA-125:E

Micron Technology
DDR3L SDRAM · 4 Gbit · 256M x 16 · 800 MHz · 13.75 ns · 1.35 V (DDR3L) · 1.35 V · 96-FBGA (9x14 mm)

✓ 有现货

$3.1 / 个

查看数据手册 →

IS43TR16256B-125KBL

Same package and pinout, minor die revision

📋 参考替代料(不在目录中)

IS43TR16256A-125KBLI

Industrial temperature range (-40°C to +95°C)

📋 参考替代料(不在目录中)

AS4C256M16D3L-12BIN

DDR3L 1.35V, same package

📋 参考替代料(不在目录中)

IS43TR16256A-125KBL 最大额定值与电气特性

存储器类型 DDR3 SDRAM
存储容量 4Gbit (256M x 16)
数据速率 1600MT/s
Clock Frequency 800 MHz
Access Time 20 ns
Supply Voltage (VDD) 1.5V ± 0.075V
Supply Voltage (VDDQ) 1.5V ± 0.075V
CAS 延迟 11
Burst Length 8 (with burst chop 4)
封装 96-TWBGA (9x13mm)
安装类型 Surface Mount
工作温度 0°C to +95°C (Tc)
RoHS Compliant
引脚数 96
存储组织 256M x 16

IS43TR16256A-125KBL 引脚配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
引脚 A1 VDD — Power supply for core logic
引脚 A2 DQ0 — Data input/output bit 0
引脚 A3 DQ1 — Data input/output bit 1
引脚 A4 VSS — Ground
引脚 A5 DQ2 — Data input/output bit 2
引脚 A6 DQ3 — Data input/output bit 3
引脚 A7 VDDQ — Power supply for I/O
引脚 A8 DQ4 — Data input/output bit 4
引脚 A9 DQ5 — Data input/output bit 5
引脚 A10 VSS — Ground
引脚 A11 DQ6 — Data input/output bit 6
引脚 A12 DQ7 — Data input/output bit 7
引脚 B1 VSS — Ground
引脚 B2 DQ8 — Data input/output bit 8
引脚 B3 DQ9 — Data input/output bit 9
引脚 B4 VDD — Power supply for core logic
引脚 B5 DQ10 — Data input/output bit 10
引脚 B6 DQ11 — Data input/output bit 11
引脚 B7 VSS — Ground
引脚 B8 DQ12 — Data input/output bit 12
引脚 B9 DQ13 — Data input/output bit 13
引脚 B10 VDDQ — Power supply for I/O
引脚 B11 DQ14 — Data input/output bit 14
引脚 B12 DQ15 — Data input/output bit 15
引脚 C1 VDDQ — Power supply for I/O
引脚 C2 VSS — Ground
引脚 C3 VDD — Power supply for core logic
引脚 C4 VSS — Ground
引脚 C5 VDDQ — Power supply for I/O
引脚 C6 VSS — Ground
引脚 C7 VDD — Power supply for core logic
引脚 C8 VSS — Ground
引脚 C9 VDDQ — Power supply for I/O
引脚 C10 VSS — Ground
引脚 C11 VDD — Power supply for core logic
引脚 C12 VSS — Ground
引脚 D1 A0 — Address input bit 0
引脚 D2 A1 — Address input bit 1
引脚 D3 A2 — Address input bit 2
引脚 D4 A3 — Address input bit 3
引脚 D5 A4 — Address input bit 4
引脚 D6 A5 — Address input bit 5
引脚 D7 A6 — Address input bit 6
引脚 D8 A7 — Address input bit 7
引脚 D9 A8 — Address input bit 8
引脚 D10 A9 — Address input bit 9
引脚 D11 A10/AP — Address input bit 10 / Auto-precharge
引脚 D12 A11 — Address input bit 11
引脚 E1 A12 — Address input bit 12
引脚 E2 A13 — Address input bit 13
引脚 E3 A14 — Address input bit 14
引脚 E4 A15 — Address input bit 15
引脚 E5 BA0 — Bank address bit 0
引脚 E6 BA1 — Bank address bit 1
引脚 E7 BA2 — Bank address bit 2
引脚 E8 RAS# — Row address strobe
引脚 E9 CAS# — Column address strobe
引脚 E10 WE# — Write enable
引脚 E11 CS# — Chip select
引脚 E12 CKE — Clock enable
引脚 F1 ODT — On-die termination
引脚 F2 CK — Clock (positive)
引脚 F3 CK# — Clock (negative)
引脚 F4 VDD — Power supply for core logic
引脚 F5 VSS — Ground
引脚 F6 VDDQ — Power supply for I/O
引脚 F7 VSS — Ground
引脚 F8 VDD — Power supply for core logic
引脚 F9 VSS — Ground
引脚 F10 VDDQ — Power supply for I/O
引脚 F11 VSS — Ground
引脚 F12 VDD — Power supply for core logic
引脚 G1 DM0 — Data mask for byte 0
引脚 G2 DQS0 — Data strobe for byte 0
引脚 G3 DQS0# — Data strobe complement for byte 0
引脚 G4 VSS — Ground
引脚 G5 VDDQ — Power supply for I/O
引脚 G6 VSS — Ground
引脚 G7 VDD — Power supply for core logic
引脚 G8 VSS — Ground
引脚 G9 VDDQ — Power supply for I/O
引脚 G10 VSS — Ground
引脚 G11 VDD — Power supply for core logic
引脚 G12 VSS — Ground
引脚 H1 DM1 — Data mask for byte 1
引脚 H2 DQS1 — Data strobe for byte 1
引脚 H3 DQS1# — Data strobe complement for byte 1
引脚 H4 VSS — Ground
引脚 H5 VDDQ — Power supply for I/O
引脚 H6 VSS — Ground
引脚 H7 VDD — Power supply for core logic
引脚 H8 VSS — Ground
引脚 H9 VDDQ — Power supply for I/O
引脚 H10 VSS — Ground
引脚 H11 VDD — Power supply for core logic
引脚 H12 VSS — Ground
引脚 J1 VDDQ — Power supply for I/O
引脚 J2 VSS — Ground
引脚 J3 VDD — Power supply for core logic
引脚 J4 VSS — Ground
引脚 J5 VDDQ — Power supply for I/O
引脚 J6 VSS — Ground
引脚 J7 VDD — Power supply for core logic
引脚 J8 VSS — Ground
引脚 J9 VDDQ — Power supply for I/O
引脚 J10 VSS — Ground
引脚 J11 VDD — Power supply for core logic
引脚 J12 VSS — Ground
引脚 K1 VSS — Ground
引脚 K2 VDDQ — Power supply for I/O
引脚 K3 VSS — Ground
引脚 K4 VDD — Power supply for core logic
引脚 K5 VSS — Ground
引脚 K6 VDDQ — Power supply for I/O
引脚 K7 VSS — Ground
引脚 K8 VDD — Power supply for core logic
引脚 K9 VSS — Ground
引脚 K10 VDDQ — Power supply for I/O
引脚 K11 VSS — Ground
引脚 K12 VDD — Power supply for core logic
引脚 L1 VDD — Power supply for core logic
引脚 L2 VSS — Ground
引脚 L3 VDDQ — Power supply for I/O
引脚 L4 VSS — Ground
引脚 L5 VDD — Power supply for core logic
引脚 L6 VSS — Ground
引脚 L7 VDDQ — Power supply for I/O
引脚 L8 VSS — Ground
引脚 L9 VDD — Power supply for core logic
引脚 L10 VSS — Ground
引脚 L11 VDDQ — Power supply for I/O
引脚 L12 VSS — Ground

典型应用

IS43TR16256A-125KBL 适用于 6 应用s: Embedded Systems Main Memory, Networking Equipment, Industrial PCs, High-Performance Computing Modules, Consumer Electronics, Telecommunications Infrastructure.

🔧

Embedded Systems Main Memory

The IS43TR16256A-125KBL provides 4Gbit DDR3 SDRAM for embedded processors, offering high bandwidth and low latency. Its 1600MT/s data rate and 1.5V operation align with typical embedded memory controllers, enabling smooth multitasking and fast data access. The 96-TWBGA package fits compact PCB designs, and the device's auto-refresh and self-refresh modes help manage power in battery-powered or thermally constrained systems. Designers should ensure proper decoupling and signal integrity for reliable operation.

🌐

Networking Equipment

In routers, switches, and network appliances, the IS43TR16256A-125KBL serves as packet buffer memory, handling high-throughput data streams. Its 1600MT/s speed and 4Gbit density provide ample storage for queue management and forwarding tables. The device's on-die termination (ODT) improves signal integrity on high-speed buses, reducing reflections and crosstalk. The 1.5V supply is compatible with common networking ASICs, and the compact TWBGA package allows dense board layouts. For optimal performance, route DDR3 traces with matched lengths and controlled impedance.

🏭

Industrial PCs

Industrial PCs require reliable, long-lifetime memory for control and monitoring applications. The IS43TR16256A-125KBL offers 4Gbit capacity and 1600MT/s speed, supporting demanding industrial software. Its 0°C to +95°C operating temperature range suits typical industrial environments, and the 1.5V standard voltage ensures compatibility with industrial-grade chipsets. The device's self-refresh mode reduces power during idle periods, which is beneficial for energy-efficient designs. For harsh environments, consider the industrial temperature variant IS43TR16256A-125KBLI.

🖥️

High-Performance Computing Modules

The IS43TR16256A-125KBL is used in compute modules and accelerators where high memory bandwidth is critical. Its 1600MT/s data rate and 16-bit interface provide fast data transfer for parallel processing tasks. The device's low latency (CL=11) reduces memory access delays, improving overall system performance. The 96-TWBGA package supports high-density board designs, and the 1.5V operation is standard for DDR3-based compute platforms. For multi-channel configurations, multiple devices can be used to increase bandwidth, but careful attention to signal integrity and power delivery is required.

📺

Consumer Electronics

In consumer devices like smart TVs, set-top boxes, and gaming consoles, the IS43TR16256A-125KBL provides main memory for operating systems and applications. Its 4Gbit capacity supports multitasking and media playback, while the 1600MT/s speed ensures smooth performance. The 1.5V supply is compatible with consumer-grade SoCs, and the compact TWBGA package enables slim device designs. The device's low power consumption in self-refresh mode extends battery life in portable devices. For cost-sensitive designs, consider alternative DDR3 parts from Samsung or Micron.

📡

Telecommunications Infrastructure

The IS43TR16256A-125KBL is used in base stations, switches, and telecom equipment for buffering and data processing. Its high speed and density support the large data volumes in telecom networks. The device's on-die termination and programmable latency allow fine-tuning for specific system requirements. The 1.5V operation is standard in telecom designs, and the 96-TWBGA package is suitable for high-reliability applications. For extended temperature requirements, the industrial variant IS43TR16256A-125KBLI is recommended. Proper ESD protection and power filtering are essential in this environment.

What is the memory size of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL is a 4Gbit DDR3 SDRAM organized as 256M x 16. According to the ISSI datasheet, it provides 4Gbit of memory density with a 16-bit I/O width, suitable for applications requiring high-capacity volatile storage.
What is the operating voltage of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL operates at a standard voltage of 1.5V for both VDD and VDDQ, with a tolerance of ±0.075V. This is the standard DDR3 voltage level, ensuring compatibility with typical DDR3 memory controllers.
What is the data rate of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL supports a data rate of 1600MT/s, corresponding to an 800 MHz clock frequency. This high-speed data transfer capability makes it suitable for bandwidth-intensive applications such as networking and computing.
What package is IS43TR16256A-125KBL available in?
The IS43TR16256A-125KBL is available in a 96-ball TWBGA (9x13mm) package. This compact surface-mount package is designed for space-constrained PCB layouts and provides good thermal and electrical performance.
What is the CAS latency of IS43TR16256A-125KBL?
The IS43TR16256A-125KBL has a CAS latency of 11 (CL=11) at 1600MT/s. This latency setting is programmable and can be adjusted via the mode register to optimize performance for specific system requirements.
Is IS43TR16256A-125KBL RoHS compliant?
Yes, the IS43TR16256A-125KBL is RoHS compliant. According to the ISSI datasheet and distributor listings, this component meets the Restriction of Hazardous Substances directive, making it suitable for use in environmentally sensitive applications.
What is the difference between IS43TR16256A-125KBL and IS43TR16256AL-125KBL?
The IS43TR16256A-125KBL operates at 1.5V standard voltage, while the IS43TR16256AL-125KBL is a low-voltage version operating at 1.35V (DDR3L). Both are 4Gbit DDR3 SDRAM in the same 96-TWBGA package, but the 'L' variant is backward compatible with 1.5V and offers lower power consumption.
Can IS43TR16256A-125KBL be used in automotive applications?
The IS43TR16256A-125KBL is not specifically rated for automotive applications; its operating temperature range is 0°C to +95°C (Tc). For automotive-grade DDR3, consider ISSI's AEC-Q100 qualified variants, such as IS43TR16256A-125KBLI, which may have extended temperature ranges.
What is the price of IS43TR16256A-125KBL?
As of 2026-08-19, the price of IS43TR16256A-125KBL varies by quantity and distributor. At DigiKey, the unit price is approximately $12.50, with volume discounts reducing it to around $8.10 at 1000 pieces. Prices are subject to change and availability.
Where can I buy IS43TR16256A-125KBL?
IS43TR16256A-125KBL is available from major distributors including DigiKey, Mouser, and Octopart. You can purchase it directly from these online platforms, which offer real-time inventory and pricing. It is also listed on XAIPART for procurement.
What is the lead time for IS43TR16256A-125KBL?
The lead time for IS43TR16256A-125KBL is typically 4-6 weeks from ISSI, depending on order quantity and distributor stock. Distributors like DigiKey often have stock available for immediate shipment, as indicated by 'ships today' on their product page.
Is IS43TR16256A-125KBL in stock?
Yes, IS43TR16256A-125KBL is in stock at major distributors. DigiKey lists it as 'ships today', and Mouser shows inventory. For real-time stock levels, check the distributor websites directly.
What is the best drop-in replacement for IS43TR16256A-125KBL?
The best drop-in replacement for IS43TR16256A-125KBL is the IS43TR16256B-125KBL from ISSI, which shares the same 96-TWBGA package and pinout. Other pin-compatible options include the IS43TR16256AL-125KBL (low-voltage) and Micron's MT41K256M16TW-093:P, but verify pin compatibility before substitution.
Can MT41K256M16TW-093:P replace IS43TR16256A-125KBL?
Yes, the Micron MT41K256M16TW-093:P is a functional equivalent to IS43TR16256A-125KBL, both being 4Gbit DDR3 SDRAM in a 96-ball FBGA package. However, the MT41K256M16TW-093:P is a DDR3L device operating at 1.35V, while the IS43TR16256A-125KBL operates at 1.5V. Verify pin compatibility and voltage requirements before replacement.
What are the key specifications of IS43TR16256A-125KBL that engineers should know?
The IS43TR16256A-125KBL is a 4Gbit DDR3 SDRAM with a 256M x 16 organization, operating at 1.5V and supporting 1600MT/s data rates. It features a CAS latency of 11, burst length of 8, and is packaged in a 96-TWBGA (9x13mm). It includes on-die termination, auto-refresh, and self-refresh modes, making it suitable for high-performance embedded and networking applications.

工程参考数据: IS43TR16256A-125KBL ——对比、设计指导和合规信息。

选型指南

Choose the IS43TR16256A-125KBL when you need a standard 1.5V DDR3 SDRAM with 4Gbit density and 1600MT/s speed in a 96-TWBGA package. It is ideal for embedded systems, networking, and industrial PCs where 1.5V operation is required. If you need lower power consumption, consider the IS43TR16256AL-125KBL (DDR3L at 1.35V) which is backward compatible with 1.5V. For industrial temperature ranges, select the IS43TR16256A-125KBLI. Cross-brand alternatives like the Micron MT41K256M16TW-093:P offer similar performance but may have different voltage and latency characteristics; verify compatibility before substitution. For cost-sensitive designs, Samsung's K4B4G1646D-BCK00 is an alternative, but ensure pin compatibility.

与替代料对比

参数 本产品 IS43TR16256B-125KBL IS43TR16256AL-125KBL MT41K256M16TW-093
Package 96-TWBGA (9x13) 96-TWBGA (9x13) 96-TWBGA (9x13) P: 96-FBGA (9x13)
Brand ISSI ISSI ISSI P: Micron
Memory Size 4Gbit 4Gbit 4Gbit P: 4Gbit
Data Rate 1600MT/s 1600MT/s 1600MT/s P: 1866MT/s
Supply Voltage 1.5V 1.5V 1.35V (DDR3L) P: 1.35V (DDR3L)
CAS Latency 11 11 11 P: 13
Operating Temperature 0°C to +95°C 0°C to +95°C 0°C to +95°C P: 0°C to +95°C
RoHS Compliant Compliant Compliant P: Compliant

关键差异点

  • Standard 1.5V DDR3 operation (对比 MT41K256M16TW-093:P)
  • Lower CAS latency (对比 MT41K256M16TW-093:P)
  • Same-brand drop-in availability (对比 MT41K256M16TW-093:P)

设计说明

The IS43TR16256A-125KBL requires a 1.5V VDD and VDDQ supply with ±0.075V tolerance. Use low-impedance decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize voltage ripple. Ensure the power plane has low inductance and adequate copper pour to handle transient currents during read/write operations.

For DDR3 routing, maintain controlled impedance (typically 50 ohms single-ended, 100 ohms differential) for DQ, DQS, and address/command lines. Match trace lengths within ±20 mils for data groups and ±100 mils for address/command to ensure signal integrity. Follow the layout guidelines in the ISSI datasheet for TWBGA package to avoid crosstalk and reflections.

The IS43TR16256A-125KBL has a maximum operating temperature of +95°C (Tc). Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The 96-TWBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -I variant with extended temperature range.

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
无铅
无卤
Unknown
冲突矿物
Unknown

RoHS compliant per distributor listings. Not AEC-Q100 qualified; industrial temperature variant available.

数据核验日期: 2026-08-19 ——数据由 XAIPART 元器件工程团队核验和整理

相关搜索

IS43TR16256A-125KBL datasheet IS43TR16256A-125KBL price IS43TR16256A-125KBL buy IS43TR16256A-125KBL equivalent IS43TR16256A-125KBL vs MT41K256M16TW-093:P 4Gb DDR3 SDRAM 256Mx16 96-TWBGA DDR3 ISSI DDR3 memory DDR3 1600MT/s 1.5V IS43TR16256A-125KBL pinout

相关元器件 & 术语

ISSI IS43TR16256A-125KBL DDR3 SDRAM SDRAM Memory IC 4Gbit 256M x 16 1600MT/s 800 MHz 96-TWBGA TWBGA BGA 1.5V CAS latency RoHS IS43TR16256B-125KBL IS43TR16256AL-125KBL MT41K256M16TW-093:P Micron Embedded systems Networking
相关技术指南
IS43TR16256A-125KBL 4Gb DDR3 SDRAM:规格、设计指南和替代方案
IS43TR16256A-125KBL 是 ISSI 推出的一款 4Gbit DDR3 SDRAM(256Mx16),1600MT/s,1.5V,96-TWBGA 封装。生命周期状态为活跃,XAIPART 库存 99,999 片。
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