IS43TR16256AL-125KBL vs H5AN8G4NCJR-XXC 对比

详细并排对比 IS43TR16256AL-125KBL 出自 ISSI, Integrated Silicon Solution Inc 和 H5AN8G4NCJR-xxC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL ✓ 量产中
SK hynix
H5AN8G4NCJR-xxC H5AN8G4NCJR-xxC - 8Gb DDR4 SDRAM | SK Hynix

H5AN8G4NCJR-xxC - 8Gb DDR4 SDRAM | SK Hynix

H5AN8G4NCJR-xxC ✓ 量产中

规格对比

参数 IS43TR16256AL-125KBL H5AN8G4NCJR-xxC
品牌 ISSI, Integrated Silicon Solution Inc SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.60 $8.50
存储器类型 SDRAM - DDR3L DDR4 SDRAM
存储容量 4Gbit (256M x 16) —
接口 Parallel —
Clock Frequency 800 MHz —
Access Time 20 ns —
电源电压 1.35V (backward compatible to 1.5V) 1.2V
封装 96-TWBGA (9x13mm) FBGA
安装类型 Surface Mount Surface Mount
工作温度 0°C ~ 95°C [DATA_NEEDED: operating temperature range]
Memory Format DRAM —
Technology SDRAM - DDR3L —
数据速率 1600 Mbps [DATA_NEEDED: speed grade from xxC suffix]
RoHS 状态 Compliant —
Lead-Free Yes Yes
Number of Terminals 96 —
Density — 8Gb
存储组织 — x4 (H5AN8G4NCJR)
RoHS — Compliant
无卤 — Yes
Prefetch — 8-bit
Burst Length — 8 (BL8)
Refresh — Auto-refresh and self-refresh
On-Die Termination — Yes

数据手册与资源

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