IS43TR16256AL-125KBL vs IS43TR16256A-125KBL 对比

详细并排对比 IS43TR16256AL-125KBL 出自 ISSI, Integrated Silicon Solution Inc 和 IS43TR16256A-125KBL 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL ✓ 量产中
ISSI, Integrated Silicon Solution Inc
IS43TR16256A-125KBL IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI

IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI

IS43TR16256A-125KBL ✓ 量产中

规格对比

参数 IS43TR16256AL-125KBL IS43TR16256A-125KBL
品牌 ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.60 $19.09
存储器类型 SDRAM - DDR3L DDR3 SDRAM
存储容量 4Gbit (256M x 16) 4Gbit (256M x 16)
接口 Parallel —
Clock Frequency 800 MHz 800 MHz
Access Time 20 ns 20 ns
电源电压 1.35V (backward compatible to 1.5V) —
封装 96-TWBGA (9x13mm) 96-TWBGA (9x13mm)
安装类型 Surface Mount Surface Mount
工作温度 0°C ~ 95°C 0°C to +95°C (Tc)
Memory Format DRAM —
Technology SDRAM - DDR3L —
数据速率 1600 Mbps 1600MT/s
RoHS 状态 Compliant —
Lead-Free Yes —
Number of Terminals 96 —
Supply Voltage (VDD) — 1.5V ± 0.075V
Supply Voltage (VDDQ) — 1.5V ± 0.075V
CAS 延迟 — 11
Burst Length — 8 (with burst chop 4)
RoHS — Compliant
引脚数 — 96
存储组织 — 256M x 16

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