ISA150233C03LMDSXTMA1 vs AUIRF7640S2TR 对比

详细并排对比 ISA150233C03LMDSXTMA1 出自 Infineon 和 AUIRF7640S2TR 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 ✓ 量产中

规格对比

参数 ISA150233C03LMDSXTMA1 AUIRF7640S2TR
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.61 $1.18
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Configuration Dual N-channel + P-channel (1 N + 1 P) —
Drain-Source Voltage (VDS) 30 V 60 V
N-channel Continuous Drain Current (Ta) 7.6 A —
N-channel Continuous Drain Current (Tc) 10.2 A —
P-channel Continuous Drain Current (Ta) 6.6 A —
P-channel Continuous Drain Current (Tc) 8.8 A —
Total Power Dissipation (Ta) 1.4 W —
Total Power Dissipation (Tc) 2.5 W —
封装 PG-DSO-8-920 (SO-8 with thermal pad) DirectFET SB (Surface Mount)
安装类型 Surface Mount Surface Mount
Marking Code 1523C03L —
Technology OptiMOS 3 trench MOSFET HEXFET Power MOSFET (Automotive Grade)
Channel Type N-channel + P-channel enhancement mode —
工作温度范围 -55 C to +150 C (junction) -40C to +150C [DATA_NEEDED: junction temp upper limit]
RoHS 状态 Compliant Compliant [DATA_NEEDED: confirmed in datasheet]
FET Type — N-Channel
Continuous Drain Current (ID) @ TA=25C — 5.8 A
Continuous Drain Current (ID) @ TC=25C — 21 A
Power Dissipation (PD) @ TA=25C — 2.4 W
Power Dissipation (PD) @ TC=25C — 30 W
On-Resistance RDS(on) — 36 mΩ
Total Gate Charge (Qg) — 7.3 nC
Automotive Qualification — AEC-Q101 (Automotive Grade per datasheet)
Primary Application — Automotive Class D audio amplifier output stage

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