ISA150233C03LMDSXTMA1 vs AUIRF7640S2TR 비교

다음의 상세 나란히 비교: ISA150233C03LMDSXTMA1 제조: Infineon 및 AUIRF7640S2TR 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 ✓ 활성

사양 비교

파라미터 ISA150233C03LMDSXTMA1 AUIRF7640S2TR
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.61 $1.18
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Configuration Dual N-channel + P-channel (1 N + 1 P) —
Drain-Source Voltage (VDS) 30 V 60 V
N-channel Continuous Drain Current (Ta) 7.6 A —
N-channel Continuous Drain Current (Tc) 10.2 A —
P-channel Continuous Drain Current (Ta) 6.6 A —
P-channel Continuous Drain Current (Tc) 8.8 A —
Total Power Dissipation (Ta) 1.4 W —
Total Power Dissipation (Tc) 2.5 W —
패키지 PG-DSO-8-920 (SO-8 with thermal pad) DirectFET SB (Surface Mount)
실장 유형 Surface Mount Surface Mount
Marking Code 1523C03L —
Technology OptiMOS 3 trench MOSFET HEXFET Power MOSFET (Automotive Grade)
Channel Type N-channel + P-channel enhancement mode —
동작 온도 범위 -55 C to +150 C (junction) -40C to +150C [DATA_NEEDED: junction temp upper limit]
RoHS 상태 Compliant Compliant [DATA_NEEDED: confirmed in datasheet]
FET Type — N-Channel
Continuous Drain Current (ID) @ TA=25C — 5.8 A
Continuous Drain Current (ID) @ TC=25C — 21 A
Power Dissipation (PD) @ TA=25C — 2.4 W
Power Dissipation (PD) @ TC=25C — 30 W
On-Resistance RDS(on) — 36 mΩ
Total Gate Charge (Qg) — 7.3 nC
Automotive Qualification — AEC-Q101 (Automotive Grade per datasheet)
Primary Application — Automotive Class D audio amplifier output stage

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