ISA250300C04LMDSXTMA1 vs IRF7341GTRPBF 对比

详细并排对比 ISA250300C04LMDSXTMA1 出自 Infineon 和 IRF7341GTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 ✓ 量产中

规格对比

参数 ISA250300C04LMDSXTMA1 IRF7341GTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.61 $0.76
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Configuration Dual N-channel + P-channel (N+P array) Dual N-Channel
Drain-Source Voltage (VDS) 40 V 55 V
Continuous Drain Current N-channel 5.9 A (Ta), 7.9 A (Tc) —
Continuous Drain Current P-channel 5.8 A (Ta), 7.8 A (Tc) —
Power Dissipation 1.4 W (Ta), 2.5 W (Tc) —
封装 SO-8 (PG-DSO-8-920) 8-SO (SOIC-8)
安装类型 Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 3) IR HEXFET Planar MOSFET
Packaging Tape & Reel (suffix XTMA1) —
Datasheet Document Infineon ISA250300C04LMDS datasheet (per Infineon product page) —
工作温度范围 [DATA_NEEDED: operating temperature range] -55 C to +175 C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range per channel] [DATA_NEEDED: typical VGS(th) value]
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) per channel at specified VGS] —
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes (PBF suffix)
Continuous Drain Current (ID) — 5.1 A
On-Resistance (RDS(on)) max — 50 mOhm at VGS=10V
Power Dissipation (PD) — 2.4 W
Maximum Junction Temperature — 175 C
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]

数据手册与资源

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