ISC015N03LF2SATMA1 vs ISZ033N03LF2SATMA1 对比
详细并排对比 ISC015N03LF2SATMA1 出自 Infineon 和 ISZ033N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC015N03LF2SATMA1 | ISZ033N03LF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.96 | $0.68 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ 2 (<= 40 V trench) | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 43 A | 20 A |
| Continuous Drain Current (ID) at TC=25C | 214 A | 109 A |
| On-Resistance RDS(on) max at VGS=10V | 1.5 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2.35 V | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 125 W | — |
| 封装 | PG-TDSON-8-62 (TDSON EP) | PG-TSDSON-8 FL (8-pin) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | — | 3 W |
| Power Dissipation (PD) at TC=25C | — | 71 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V max @ 30 uA |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| 工作结温 | — | -55 C to +175 C |
| Technology | — | OptiMOS 5 |