ISC015N03LF2SATMA1 vs ISZ033N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISC015N03LF2SATMA1 by Infineon and ISZ033N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC015N03LF2SATMA1

ISC015N03LF2SATMA1 - 30V 214A OptiMOS N-Ch MOSFET | Infineon

ISC015N03LF2SATMA1 βœ“ Active
Infineon
ISZ033N03LF2SATMA1 ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon

ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon

ISZ033N03LF2SATMA1 βœ“ Active

Specification Comparison

Parameter ISC015N03LF2SATMA1 ISZ033N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.96 $0.68
Manufacturer Infineon Technologies β€”
Product Family OptiMOSβ„’ 2 (<= 40 V trench) β€”
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 43 A 20 A
Continuous Drain Current (ID) at TC=25C 214 A 109 A
On-Resistance RDS(on) max at VGS=10V 1.5 mΞ© β€”
Gate Threshold Voltage VGS(th) 2.35 V β€”
Power Dissipation at TA=25C 3 W β€”
Power Dissipation at TC=25C 125 W β€”
Package PG-TDSON-8-62 (TDSON EP) PG-TSDSON-8 FL (8-pin)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
FET Type β€” N-Channel
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TA=25C β€” 3 W
Power Dissipation (PD) at TC=25C β€” 71 W
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” 2.35 V max @ 30 uA
On-Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typ]
Operating Junction Temperature β€” -55 C to +175 C
Technology β€” OptiMOS 5

Datasheets & Resources

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