ISC016N08NM8ATMA1 vs ISC058N04NM5ATMA1 对比

详细并排对比 ISC016N08NM8ATMA1 出自 Infineon 和 ISC058N04NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC016N08NM8ATMA1 ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 ✓ 量产中

规格对比

参数 ISC016N08NM8ATMA1 ISC058N04NM5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.02 $0.60
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 8 —
Channel Type N-Channel —
Drain-Source Voltage (VDS max) 80 V —
Gate-Source Voltage (VGS max) +/-20 V (typical rating) —
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc [DATA_NEEDED: pulsed/continuous current rating at Tc] —
Pulsed Drain Current (IDM) at Tc 268 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 263 W —
On-State Resistance RDS(on) typ @ VGS=10V 1.6 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: gate threshold voltage] 3.4 V
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
工作温度范围 -55 C to +150 C (junction) -55C to +175C
封装 SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) PG-TDSON-8 FL (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
Technology Trench-gate OptiMOS 8 (silicon) OptiMOS 5 trench MOSFET
RoHS 状态 Compliant —
Lead-Free / Halogen-Free Lead-free (per Infineon product page) —
MSL 等级 1 (per JEDEC J-STD-020E classification for SuperSO8) —
Product Family — OptiMOS 5 40V Normal Level
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

数据手册与资源

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