ISC016N08NM8ATMA1 vs ISC058N04NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC016N08NM8ATMA1 by Infineon and ISC058N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 β ActiveSpecification Comparison
| Parameter | ISC016N08NM8ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS max) | 80 V | β |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | β |
| Continuous Drain Current (ID) at Ta | 29 A | β |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | β |
| Pulsed Drain Current (IDM) at Tc | 268 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 263 W | β |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | 3.4 V |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +175C |
| Package | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOS 5 trench MOSFET |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | β |
| MSL Level | 1 (per JEDEC J-STD-020E classification for SuperSO8) | β |
| Product Family | β | OptiMOS 5 40V Normal Level |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25C) | β | 63 A |
| Continuous Drain Current (ID, Ta=25C) | β | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | β | 5.8 mOhm |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 42 W |
| RoHS Compliance | β | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | β | MSL per JEDEC J-STD-020 |
| Gate Drive Level | β | Normal Level (10V VGS recommended) |