ISC028N03LF2SATMA1 vs ISC015N06NM5LF2ATMA1 对比
详细并排对比 ISC028N03LF2SATMA1 出自 Infineon 和 ISC015N06NM5LF2ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ 量产中规格对比
| 参数 | ISC028N03LF2SATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.86 | $2.21 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | 1.55 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| 工作结温 | -55 C to +175 C | -55 °C to +175 °C |
| 封装 | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8 FL (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Technology | — | OptiMOS 5 Linear FET 2 (N-Channel) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Pulsed Drain Current (IDM) at Tc | — | 275 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 217 W |
| On-Resistance RDS(on) at VGS=10V (typ) | — | 1.3 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3 V |
| Gate-Source Voltage Rating | — | ±20 V |
| Reverse Recovery Charge (Qrr) | — | 1.3 nC |
| Input Capacitance (Ciss) | — | 6.9 nF |
| Output Capacitance (Coss) | — | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | — | 55 pF |
| Total Gate Charge (Qg) | — | 90 nC |
| RoHS | — | Compliant |