ISC028N03LF2SATMA1 vs ISC015N06NM5LF2ATMA1 비교
다음의 상세 나란히 비교: ISC028N03LF2SATMA1 제조: Infineon 및 ISC015N06NM5LF2ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | ISC028N03LF2SATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.86 | $2.21 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | 1.55 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| 동작 접합 온도 | -55 C to +175 C | -55 °C to +175 °C |
| 패키지 | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8 FL (5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | — |
| Technology | — | OptiMOS 5 Linear FET 2 (N-Channel) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Pulsed Drain Current (IDM) at Tc | — | 275 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 217 W |
| On-Resistance RDS(on) at VGS=10V (typ) | — | 1.3 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3 V |
| Gate-Source Voltage Rating | — | ±20 V |
| Reverse Recovery Charge (Qrr) | — | 1.3 nC |
| Input Capacitance (Ciss) | — | 6.9 nF |
| Output Capacitance (Coss) | — | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | — | 55 pF |
| Total Gate Charge (Qg) | — | 90 nC |
| RoHS | — | Compliant |