ISC033N03LF2SATMA1 vs ISC045N03L5SATMA1 对比
详细并排对比 ISC033N03LF2SATMA1 出自 Infineon 和 ISC045N03L5SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC033N03LF2SATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.81 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| MPN | ISC033N03LF2SATMA1 | — |
| Part Family | OptiMOS LF2 (<= 40V) | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS trench (<= 40V) | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TC | 108 A | — |
| Continuous Drain Current (ID) at TA | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum On-Resistance RDS(on) max | 3.3 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage rating] | ±20 V |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 71 W | — |
| 封装 | PG-TDSON-8-62 (Source-Down, 5x6 mm) | SuperSO8 5x6 (PG-TDSON-8-6) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C |
| Junction Temperature (TJ) max | [DATA_NEEDED: junction temperature max] | — |
| Configuration | Single N-channel, source-down | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| Part Number | — | ISC045N03L5SATMA1 |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |