ISC040N10NM7ATMA1 vs ISC015N06NM5ATMA1 对比
详细并排对比 ISC040N10NM7ATMA1 出自 Infineon 和 ISC015N06NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISC040N10NM7ATMA1 - 100V 130A OptiMOS 7 N-Channel MOSFET | Infineon
ISC040N10NM7ATMA1 ✓ 量产中
规格对比
| 参数 | ISC040N10NM7ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 18 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 130 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta=25°C | 3 W | — |
| Power Dissipation (PD) at Tc=25°C | 150 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| RDS(on) @ VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| 封装 | PG-TDSON-8-34 (SSO8) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55°C to +175°C (TJ max) | -55 C to +175 C |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | — | 1 |