ISC045N03L5SATMA1 vs IPD028N06NF2SATMA1 对比
详细并排对比 ISC045N03L5SATMA1 出自 Infineon 和 IPD028N06NF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC045N03L5SATMA1 | IPD028N06NF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.51 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 | IPD028N06NF2SATMA1 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 / Trench | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 18 A | 24 A |
| Continuous Drain Current (ID) at TC=25°C | 63 A | 139 A |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max] |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | — |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| 封装 | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +150 °C | — |
| RoHS 状态 | Compliant | Compliant |
| Technology Family | — | OptiMOS 5 60V |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 2.85 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation at TA=25°C | — | 3 W |
| Power Dissipation at TC=25°C | — | 150 W |
| 工作结温范围 | — | -55 C to +175 C |
| 引脚数量 | — | 3 (Gate, Drain-tab, Source) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| Packing | — | Tape & Reel (T&R) |