ISC045N03L5SATMA1 vs IPD028N06NF2SATMA1 Comparison

Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and IPD028N06NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC045N03L5SATMA1 IPD028N06NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC045N03L5SATMA1 IPD028N06NF2SATMA1
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 5 / Trench —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25°C 18 A 24 A
Continuous Drain Current (ID) at TC=25°C 63 A 139 A
On-Resistance RDS(on) max @ VGS=10V 4.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 µA —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max]
Total Gate Charge (Qg) 13 nC @ VGS=10 V —
Input Capacitance (Ciss) 870 pF @ VDS=15 V —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 30 W —
Package SuperSO8 5x6 (PG-TDSON-8-6) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +150 °C —
RoHS Status Compliant Compliant
Technology Family — OptiMOS 5 60V
Drain-Source Voltage (VDS) max — 60 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) typ @ VGS=10V — 2.85 mΩ
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Power Dissipation at TA=25°C — 3 W
Power Dissipation at TC=25°C — 150 W
Operating Junction Temperature Range — -55 C to +175 C
Pin Count — 3 (Gate, Drain-tab, Source)
MSL Level — 1 (per JEDEC J-STD-020)
Packing — Tape & Reel (T&R)

Datasheets & Resources

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