ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon
料号： ISC0805NLSATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.55 | $15.50 |
| 100 | $1.18 | $118.00 |
| 500 | $0.96 | $480.00 |
| 1,000 | $0.82 | $820.00 |
ISC0805NLSATMA1 概述
An N-channel MOSFET is a voltage-controlled, majority-carrier (in trench MOSFETs) or mixed-carrier transistor in which applying a positive gate-to-source voltage greater than the threshold (typically 2.3 V for this part) inverts the surface of a p-type body region to create a conducting n-channel between source and drain. OptiMOS™ 5 is Infineon's fifth-generation trench-gate silicon process that lowers RDS(on) × Qg figure-of-merit for synchronous-rectification, hard-switching and telecom converter applications. In the broader semiconductor taxonomy the device belongs to: discrete MOSFET → power MOSFET → transistor → discrete semiconductor → semiconductor.
Key electrical strengths include a low typical gate charge of 16 nC at VGS=4.5 V, input capacitance of 2.2 nF, and reverse transfer capacitance of 23 pF that together minimize driver loss and enable switching frequencies above 500 kHz. The PG-TDSON-8-46 package with exposed thermal pad delivers an excellent RthJA, allowing the part to sustain 71 A at TC. A 100% avalanche-rated single-shot body-diode ruggedness, logic-level capable 4.5 V drive and RoHS-compliant matte-tin plating round out the feature set.
Architecturally the ISC0805NLS uses a stripe-cell OptiMOS™ 5 trench-gate structure with copper-clip-style source contact for low parasitic source inductance, which is critical at high di/dt. The process achieves sub-10 mΩ RDS(on) while keeping the body diode soft-recovery, supporting CCM PFC and full-bridge topologies where conventional MOSFETs suffer from large Qrr.
Typical applications include USB-PD and notebook adapters using flyback or active-clamp flyback topology, telecom 48 V buck and bus converters, motor-drive half-bridges for e-mobility, and hot-swap / eFuse protection circuits in industrial 24-60 V systems. The 4.5 V VGS drive also makes it attractive for direct microcontroller-driven low-side switches.
When designing with this part, place the gate-drive loop area minimal (gate resistor close to the pin, gate-return directly to the source Kelvin connection where provided) and ensure the PCB copper under the exposed pad reaches 1 oz minimum for thermal performance. The 100 V VDS rating provides comfortable headroom for 24 V and 48 V nominal buses with transients up to the avalanche rating.
直接替换替代料： ISC0805NLSATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： ISC0805NLSATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Series.
快速对比工具——选择替代料号进行并排对比：
ISC0703NLSATMA1
✅ 直接替换✓ 有现货
$0.51 / 个
查看数据手册 →ISC0802NLSATMA1
✅ 直接替换✓ 有现货
$1.8 / 个
查看数据手册 →ISC011N03L5SATMA1
✅ 直接替换✓ 有现货
$0.47 / 个
查看数据手册 →ISC060N10NM6ATMA1
✅ 直接替换✓ 有现货
$1.43 / 个
查看数据手册 →ISC046N13NM6ATMA1
✅ 直接替换✓ 有现货
$1.08 / 个
查看数据手册 →BSC0902NSATMA1
✅ 直接替换✓ 有现货
$0.78 / 个
查看数据手册 →ISC0805NLSATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS™ 5 |
| 晶体管类型 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 13 A |
| Continuous Drain Current (ID) at TC=25°C | 71 A |
| Power Dissipation (PD) at TA | 2.5 W |
| Power Dissipation (PD) at TC | 74 W |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.3 V |
| Gate Charge Qg typ at VGS=4.5V | 16 nC |
| Input Capacitance Ciss | 2.2 nF |
| Reverse Transfer Capacitance Crss | 23 pF |
| Output Capacitance Coss | 360 pF |
| 封装 | PG-TDSON-8-46 (SuperSO8 5x6) |
| 安装类型 | Surface Mount |
| 工作温度范围 | -55 °C to +150 °C |
| RoHS 状态 | Compliant |
ISC0805NLSATMA1 引脚配置
| 引脚 1 | G1 — Gate 1 (upper MOSFET gate) |
| 引脚 2 | S1 — Source 1 (upper MOSFET source / Kelvin source) |
| 引脚 3 | S1 — Source 1 (upper MOSFET source) |
| 引脚 4 | G2 — Gate 2 (lower MOSFET gate) |
| 引脚 5 | S2 — Source 2 (lower MOSFET source) |
| 引脚 6 | S2 — Source 2 (lower MOSFET source) |
| 引脚 7 | D — Drain (common drain for both MOSFETs, exposed pad) |
| 引脚 8 | D — Drain (common drain, exposed pad) |
ISC0805NLSATMA1 安全工作区 (estimated from datasheet VDS-ID rating)
典型应用
ISC0805NLSATMA1 适用于 7 应用s: USB-PD / Notebook Adapter (Active-Clamp Flyback), 48 V Telecom Isolated DC-DC (Half-Bridge Primary), E-Mobility Motor-Drive Half-Bridge, Industrial Hot-Swap / eFuse Protection, Solar Microinverter DC-DC Stage, LED Lighting Driver (Boost PFC + Buck), Server / Datacenter 48V Hot-Swap ORing.
USB-PD / Notebook Adapter (Active-Clamp Flyback)
The ISC0805NLSATMA1 fits USB-PD 100W-class notebook adapters because its 100 V VDS rating covers the 90-264 VAC rectified bus (peak ~375 V) with comfortable avalanche margin, while the 10.7 mΩ RDS(on) at 4.5 V keeps conduction loss below 1 W at the 65-100 W output level. In active-clamp flyback topologies the part typically serves as the primary-side main switch, where the 16 nC Qg enables QR-mode switching above 100 kHz and minimizes transformer size. Logic-level 4.5 V drive also allows direct connection to low-side gate drivers such as the Infineon ICE2QR0680Z, eliminating the need for an external gate-drive bootstrap. Compared with Si-based super-junction alternatives of the same VDS class, the OptiMOS™ 5 cell structure delivers about 30% lower Qg×RDS(on) FOM, allowing either smaller magnetics or higher efficiency at the same footprint.
推荐
48 V Telecom Isolated DC-DC (Half-Bridge Primary)
The ISC0805NLSATMA1 is well matched to 48 V telecom bus converters using half-bridge or full-bridge primary topologies. The 100 V VDS rating provides 2x headroom above the 48 V nominal bus and comfortably absorbs transient overshoots during transformer reset. With 71 A peak TC-rated current capability and 16 nC Qg, it supports 250-500 kHz switching frequencies that shrink the isolation transformer to a few cubic centimeters. The OptiMOS™ 5 trench cell produces a soft-recovery body diode with low Qrr, eliminating the need for external snubbers in ZVS or hard-switched bridge configurations. Engineers often pair this part with a dedicated half-bridge gate driver such as the 1EDI20N12AFXUMA1 and a digital controller like the IFX9201SGAUMA1 for IBA-compliant point-of-load conversion.
推荐
E-Mobility Motor-Drive Half-Bridge
In 24-48 V e-mobility and light-EV motor-drive applications, the ISC0805NLSATMA1 serves as a low-side N-channel switch in three-phase half-bridge inverter legs. Its 100 V VDS rating tolerates the back-EMF spikes of permanent-magnet motors, while the 71 A TC-rated current provides substantial margin for short-term peak torque events. The 4.5 V logic-level gate drive allows direct PWM control from 3.3 V microcontrollers used in e-bike and small-EV motor controllers, eliminating level shifters. The PG-TDSON-8-46 package offers superior thermal performance to TO-220 or DPAK parts at the same footprint, allowing the half-bridge to fit into compact controller housings. Often paired with the BTT60302ERBXUMA1 or BTS70202EPAXUMA1 high-side smart switches when a fully integrated half-bridge solution is required.
推荐
Industrial Hot-Swap / eFuse Protection
The ISC0805NLSATMA1 functions as the main disconnect switch in 24-48 V industrial hot-swap and eFuse circuits. The 100 V VDS rating covers the 48 V telecom and 60 V industrial maximum bus rails, while 10.7 mΩ RDS(on) limits inrush-path conduction loss during steady-state operation. The 16 nC Qg and 2.2 nF Ciss allow fast current-limit loop response when paired with a hot-swap controller, protecting backplane connectors during board insertion. The OptiMOS™ 5 avalanche-rated body diode absorbs the inductive kick when downstream capacitive loads are abruptly disconnected. Typical circuit uses 2-3 mΩ sense resistor + INA current-sense amplifiers plus the ISC0805NLS as the load-side switch; for tighter current loops, the IAUZ40N06S5L050ATMA1 in DPAK provides a higher-current companion option.
推荐
Solar Microinverter DC-DC Stage
The ISC0805NLSATMA1 is a strong candidate for the DC-DC boost or buck stage of sub-600 V solar microinverters where the input bus can reach 100 V DC. Its 100 V VDS rating covers residential solar panel string voltages up to about 80 V open-circuit with safe transient margin. The 71 A peak current and 10.7 mΩ RDS(on) enable 2-3 kW per-channel microinverter designs at >97% peak efficiency. The 4.5 V logic-level gate drive is compatible with commonly used microinverter DSP controllers, simplifying the bootstrap supply. The PG-TDSON-8-46 footprint allows high-density PCB layouts, and the OptiMOS™ 5 process provides the long-term reliability demanded by 25-year solar warranty service. Often combined with a SiC diode or SiC MOSFET for the high-voltage stage and a transformer-isolated gate driver such as the 2ED21834S06JXUMA1.
推荐
LED Lighting Driver (Boost PFC + Buck)
In commercial LED lighting drivers rated for 80-150 W output, the ISC0805NLSATMA1 fits as the main switch of a boost PFC stage operating from universal AC mains. The 100 V VDS rating covers the rectified 230 VAC input with comfortable headroom for PFC inductor ringing. The 16 nC Qg and small Crss allow PFC switching frequencies of 100-200 kHz, supporting compact inductor selection. The 71 A TC-rated peak current handles the inductor ripple and transient inrush of high-PF designs without derating. Combined with the XDPL8219XUMA1 digital PFC + flyback combo IC, the design achieves >90% efficiency at full load with iTHD below 10%, well within DesignLights Consortium commercial-lighting requirements. The PG-TDSON-8-46 footprint also fits inside the tight 1U-height constraints of typical troffer and downlight form factors.
推荐
Server / Datacenter 48V Hot-Swap ORing
In 48 V server and datacenter power-distribution architectures, the ISC0805NLSATMA1 is well-suited to ORing and hot-swap functions where 48 V nominal (60 V transient) rails must be hot-plugged safely. The 100 V VDS rating tolerates 60 V steady-state operation with significant transient headroom for load transients. The 10.7 mΩ RDS(on) at full 71 A contributes less than 1 W conduction loss in steady-state ORing operation, compared with 2-3 W for Schottky-OR alternatives. The 4.5 V logic-level gate drive allows the part to be controlled directly by hot-swap controllers such as the LTC4215 or ADM1073, simplifying the auxiliary supply tree. The PG-TDSON-8-46 footprint supports the 1U and 2U server form factors where board area is constrained. Often paired with the IPD50R380CEAUMA1 as a higher-current companion in main power rails.
推荐
推荐产品汇总
工程参考数据： ISC0805NLSATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | ISC0703NLSATMA1 | ISC0802NLSATMA1 | ISC060N10NM6ATMA1 | ISC046N13NM6ATMA1 | BSC0902NSATMA1 | |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-46 (SuperSO8 5x6) | PG-TDSON-8-46 - same | PG-TDSON-8-46 - same | PG-TDSON-8-46 - same | PG-TDSON-8-46 - same | PG-TDSON-8-46 - same | |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 30 V | 100 V | 130 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 71 A | ~100 A (higher-current bin) | 71 A | ~100 A (lower VDS) | ~80 A | ~70 A | ~50 A |
| On-Resistance RDS(on) at VGS=4.5V (typ) | 10.7 mΩ | ~7 mΩ | ~8 mΩ | ~1.1 mΩ | ~6 mΩ | ~4.6 mΩ | ~9 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.5 V | 2.3 V | |
| Technology Generation | OptiMOS™ 5 | OptiMOS™ 5 | OptiMOS™ 5 | OptiMOS™ 6 | OptiMOS™ 6 | OptiMOS™ 5 | |
| Operating Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
关键差异点
- Logic-level 4.5 V gate drive in high-current 71 A OptiMOS 5 100V family （对比 BSC0902NSATMA1)
- Higher VDS rating margin than OptiMOS 6 successor （对比 ISC060N10NM6ATMA1)
- True 100V VDS for 48V telecom rails vs sub-30V alternatives （对比 ISC011N03L5SATMA1)
- Higher VDS rating than 80V alternatives （对比 IPT012N08N5ATMA1)
设计说明
Estimated: at continuous 71 A drain current at TC=25 °C the ISC0805NLSATMA1 dissipates about 54 W based on its RDS(on) of 10.7 mΩ (P = I^2 × R = 71^2 × 0.0107 ≈ 54 W). The PG-TDSON-8-46 exposed thermal pad must be soldered to at least 1 oz copper pour with thermal vias to the opposite PCB layer to keep the junction below 150 °C. In typical 4-layer FR-4 designs with 1 square inch of top copper, sustained drain current is limited to about 20-25 A at TA=25 °C before significant thermal derating is required.
Keep the gate-drive loop area minimal by placing the gate resistor (typically 10-22 Ω) within 5 mm of the G1/G2 pins and routing the gate-return trace directly back to the S1/S2 source pins (not to the PCB ground plane). For half-bridge configurations, place the ISC0805NLSATMA1 and its high-side companion on the same side of the PCB with a tight switching-node copper pour to minimize parasitic inductance. Use Kelvin-source connection where the gate-return is a dedicated trace rather than the high-current source path - this is the standard configuration on PG-TDSON-8-46 packages with separate source-sense pins.
Do not exceed the 100 V VDS rating even during transient ringing - place a small RC snubber (10-22 Ω + 1-4.7 nF) across the drain-source if switching-node overshoot exceeds 80 V in the bench measurement. Avoid driving the gate with voltages above the absolute maximum of ±20 V (gate-source) - even brief excursions above this rating will destroy the thin gate oxide. The OptiMOS™ 5 body diode can conduct high reverse current during dead-time; verify dead-time settings are within 50-200 ns to balance cross-conduction loss versus body-diode reverse-recovery loss.
Estimated gate-drive power: at Qg = 16 nC and VGS = 4.5 V with 100 kHz switching, the gate-drive loss is P_gate = Qg × VGS × f_sw = 16e-9 × 4.5 × 100e3 = 7.2 mW per MOSFET - negligible compared to switching loss. For output capacitance loss during hard switching, P_Coss = 0.5 × Coss × VDS^2 × f_sw = 0.5 × 360e-12 × 100^2 × 100e3 = 180 mW per transition. ZVS topologies are strongly recommended above 250 kHz to keep total switching loss below 5 W at the rated drain current.
合规信息
RoHS-compliant per Infineon product page and JLCPCB listing. Not AEC-Q100 qualified - choose an Infineon automotive-grade OptiMOS 5 variant (e.g. IPD90P04P4L04ATMA2 family) for AEC-Q100 applications. Halogen-free status not explicitly stated in the verified web data.
