ISC080N10NM6ATMA1 vs IAUCN10S7N021ATMA1 对比
详细并排对比 ISC080N10NM6ATMA1 出自 Infineon 和 IAUCN10S7N021ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ 量产中规格对比
| 参数 | ISC080N10NM6ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $2.05 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | 175 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | — |
| 封装 | PG-TDSON-8 FL (TDSON EP) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55°C to +175°C (TJ max, per datasheet) | — |
| MSL 等级 | 1 (per JEDEC J-STD-020, per datasheet) | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | AEC-Q101 (Automotive) |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS™ 7 (trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 100 V |
| RDS(on) max @ VGS=10 V | — | 2.1 mΩ |
| Gate-Source Threshold (VGS(th)) typ | — | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | — | 105 nC |
| Input Capacitance (Ciss) | — | 2.98 nF |
| Output Capacitance (Coss) | — | 32 pF |
| Reverse Transfer Capacitance (Crss) | — | 7.153 nF |
| Power Dissipation (Pd) @ Tc | — | 217 W |
| 工作结温 | — | -55 °C to +175 °C |