ISC080N10NM6ATMA1 vs IPD034N06N3GATMA1 对比
详细并排对比 ISC080N10NM6ATMA1 出自 Infineon 和 IPD034N06N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC080N10NM6ATMA1 | IPD034N06N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | — |
| 封装 | PG-TDSON-8 FL (TDSON EP) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55°C to +175°C (TJ max, per datasheet) | [DATA_NEEDED: Tj min/max] |
| MSL 等级 | 1 (per JEDEC J-STD-020, per datasheet) | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant (Pb-free green finish) |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| Series | — | OptiMOS 3 |
| Technology | — | N-Channel Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Maximum Power Dissipation (Ptot) | — | 167 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 4 V at 93 uA |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: max VGS rating] |
| Pin Configuration | — | 3-Pin (2 + Tab) |
| Automotive Qualified | — | Yes (per Infineon product page) |