ISC080N10NM6ATMA1 vs IPD034N06N3GATMA1 Comparison
Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and IPD034N06N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC080N10NM6ATMA1 | IPD034N06N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | — |
| Package | PG-TDSON-8 FL (TDSON EP) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55°C to +175°C (TJ max, per datasheet) | [DATA_NEEDED: Tj min/max] |
| MSL Level | 1 (per JEDEC J-STD-020, per datasheet) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant (Pb-free green finish) |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| Series | — | OptiMOS 3 |
| Technology | — | N-Channel Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Maximum Power Dissipation (Ptot) | — | 167 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 4 V at 93 uA |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: max VGS rating] |
| Pin Configuration | — | 3-Pin (2 + Tab) |
| Automotive Qualified | — | Yes (per Infineon product page) |