ISK057N04LM6ATLA1 vs IPB031N08N5ATMA1 对比

详细并排对比 ISK057N04LM6ATLA1 出自 Infineon 和 IPB031N08N5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISK057N04LM6ATLA1 ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon

ISK057N04LM6ATLA1 ✓ 量产中

规格对比

参数 ISK057N04LM6ATLA1 IPB031N08N5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.52 $2.62
Manufacturer Infineon Technologies —
Series OptiMOS 6 —
晶体管类型 N-Channel MOSFET —
Technology Trench (OptiMOS 6) OptiMOS 5 (N-channel trench MOSFET)
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tc 64 A —
Continuous Drain Current (ID) at Ta [DATA_NEEDED: ID at TA=25C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max at VGS=10V [DATA_NEEDED: RDS(on) max] —
RDS(on) typical at VGS=10V 5.7 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (Qg total) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 39.1 W —
工作温度范围 -55 °C to +150 °C -55 C to +175 C
封装 / 外壳 PG-VSON-6-1 (PQFN 2x2) —
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
MSL 等级 1 [DATA_NEEDED: MSL rating]
Packaging Tape & Reel (TR) —
DigiKey Part Number 448-ISK057N04LM6ATLA1TR-ND —
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) — 120 A (Tc)
Power Dissipation (PD) Max — 167 W (Tc)
On-Resistance (RDS(on)) Max — 3.1 mOhm (VGS=10V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
封装 — PG-TO263-3 (D2PAK)
引脚数量 — 3 (Gate, Drain, Source + Tab)
Tab Connection — Drain (electrically connected to pin)
Automotive Qualified — Yes (per Arrow listing)

数据手册与资源

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