ISZ023N06LM6ATMA1 vs IPB60R040CFD7ATMA1 对比
详细并排对比 ISZ023N06LM6ATMA1 出自 Infineon 和 IPB60R040CFD7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISZ023N06LM6ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.95 | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 60 V | — |
| Part Number | ISZ023N06LM6 | — |
| Orderable Part Number | ISZ023N06LM6ATMA1 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 600 V |
| Continuous Drain Current (ID) at Ta | 24 A | — |
| Pulsed Drain Current (ID, Tc) | 149 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| 封装 | PG-TSDSON-8-34 (Surface Mount) | PG-TO263-3-2 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +175C | — |
| MSL 等级 | 1 | 1 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Configuration | Single | — |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| 功耗（TC=25°C） | — | 227 W |
| 工作温度范围 | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |