ISZ023N06LM6ATMA1 vs IPB60R040CFD7ATMA1 Comparison

Detailed side-by-side comparison of ISZ023N06LM6ATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ023N06LM6ATMA1

ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon

ISZ023N06LM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISZ023N06LM6ATMA1 IPB60R040CFD7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $5.19
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 60 V β€”
Part Number ISZ023N06LM6 β€”
Orderable Part Number ISZ023N06LM6ATMA1 β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 600 V
Continuous Drain Current (ID) at Ta 24 A β€”
Pulsed Drain Current (ID, Tc) 149 A β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 100 W β€”
Package PG-TSDSON-8-34 (Surface Mount) PG-TO263-3-2 (D2PAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
MSL Level 1 1
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Configuration Single β€”
Product Family β€” CoolMOS CFD7
Continuous Drain Current (ID, Tc=25Β°C) β€” 50 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V β€” 40 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 4 V
Total Gate Charge Qg typ β€” [DATA_NEEDED: Qg]
Power Dissipation (Tc=25Β°C) β€” 227 W
Operating Temperature Range β€” -55Β°C to +150Β°C
Integrated Body Diode β€” Yes - ultra-fast CoolMOS CFD7 diode
Target Applications β€” Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Datasheets & Resources

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