ISZ056N03LF2SATMA1 vs ISZ028N03LF2SATMA1 对比
详细并排对比 ISZ056N03LF2SATMA1 出自 Infineon 和 ISZ028N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ 量产中规格对比
| 参数 | ISZ056N03LF2SATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Series | StrongIRFET 2 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 16 A | 22 A |
| Continuous Drain Current (ID) at Tc | 72 A | 128 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 2.35 V |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | — |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| 工作温度范围 | -55 C to +175 C | -55C to +175C (junction, typical) |
| 封装 | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-TSDSON-8 FL (FL = flat lead) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Technology | — | StrongIRFET 2 (Trench MOSFET) |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| MSL 等级 | — | 1 |
| Avalanche Energy Rated | — | Yes (single-pulse) |