ISZ072N06NM6ATMA1 vs ISC060N06NM6ATMA1 对比
详细并排对比 ISZ072N06NM6ATMA1 出自 Infineon 和 ISC060N06NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISZ072N06NM6ATMA1 | ISC060N06NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.33 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | [DATA_NEEDED: VGS(th) typ/min/max] |
| 功耗（TC=25°C） | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| 封装 | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TDSON-8 (TDSON-8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C ( Tj max 175C ) | -55C to +175C (junction, per OptiMOS 6 family) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 (60V generation) |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | [DATA_NEEDED: MSL level] |
| Series | — | OptiMOS 6 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 15.2 A |
| Continuous Drain Current (ID) at Tc | — | 62 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 50 W |
| Configuration | — | Single N-Channel |
| Gate Drive | — | Standard gate drive (10 V VGS recommended for full RDS(on)) |
| On-State Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max in mohm] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ/nC] |