ISZ15EP15LMATMA1 vs ISZ028N03LF2SATMA1 对比
详细并排对比 ISZ15EP15LMATMA1 出自 Infineon 和 ISZ028N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ 量产中规格对比
| 参数 | ISZ15EP15LMATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.28 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) max | -150 V | — |
| Drain-Source On-Resistance (RDS(on)) max | 1500 mOhm @ VGS = -10 V | — |
| Continuous Drain Current (ID) at TA=25C | 820 mA | — |
| Continuous Drain Current (ID) at TC=25C | 2.7 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Power Dissipation (PD) at TC=25C | 26.3 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | 2.35 V |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Technology | OptiMOS trench-gate | StrongIRFET 2 (Trench MOSFET) |
| 封装 | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad | PG-TSDSON-8 FL (FL = flat lead) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (junction) | -55C to +175C (junction, typical) |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | 1 |
| Packaging | Tape and Reel (T&R) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |