ISZ15EP15LMATMA1 vs ISZ028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISZ15EP15LMATMA1 by Infineon and ISZ028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ15EP15LMATMA1
ISZ15EP15LMATMA1 - 150V P-Channel OptiMOS MOSFET | Infineon
ISZ15EP15LMATMA1 β ActiveInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISZ15EP15LMATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.28 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | β |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) max | -150 V | β |
| Drain-Source On-Resistance (RDS(on)) max | 1500 mOhm @ VGS = -10 V | β |
| Continuous Drain Current (ID) at TA=25C | 820 mA | β |
| Continuous Drain Current (ID) at TC=25C | 2.7 A | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Power Dissipation (PD) at TC=25C | 26.3 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | 2.35 V |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Technology | OptiMOS trench-gate | StrongIRFET 2 (Trench MOSFET) |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad | PG-TSDSON-8 FL (FL = flat lead) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +175C (junction, typical) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Packaging | Tape and Reel (T&R) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 128 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max | β | 2.8 mΞ© |
| Power Dissipation (Tc) | β | 83 W |
| Power Dissipation (Ta) | β | 3 W |
| Gate Drive Voltage (recommended) | β | 10 V (logic level at 4.5 V) |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |