K3KL2L20DM-JGCT vs K3K8K80BM-JGCT 对比

详细并排对比 K3KL2L20DM-JGCT 出自 Samsung Electronics 和 K3K8K80BM-JGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K3KL2L20DM-JGCT K3KL2L20DM-JGCT - 48Gb LPDDR5X 7500Mbps DRAM | Samsung

K3KL2L20DM-JGCT - 48Gb LPDDR5X 7500Mbps DRAM | Samsung

K3KL2L20DM-JGCT ✓ 量产中
Samsung Electronics
K3K8K80BM-JGCT K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics

K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics

K3K8K80BM-JGCT ✓ 量产中

规格对比

参数 K3KL2L20DM-JGCT K3K8K80BM-JGCT
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $20.80 $3.10
存储器类型 LPDDR5X SDRAM Low Power DRAM (LPDDR) component
Density 48 Gb [DATA_NEEDED: die density in Gb]
存储组织 x64 [DATA_NEEDED: x8/x16 organization]
数据速率 7500 Mbps —
Supply Voltage (VDD1) 1.8 V —
Supply Voltage (VDD2) 1.05 V —
Supply Voltage (VDDQ) 0.5 V [DATA_NEEDED: I/O supply voltage]
Core Voltage Rail 0.9 V —
工作温度 -25C to +85C [DATA_NEEDED: operating temperature range]
封装 441-ball FBGA —
安装类型 Surface Mount Surface Mount
接口 LPDDR5X (JEDEC low-power DRAM interface) [DATA_NEEDED: LPDDR4X or LPDDR5]
Product Status Mass Production —
Generation LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) —
Application Segment AI devices, automotive, mobile —
RoHS 状态 unknown [DATA_NEEDED: RoHS compliance]
Manufacturer — Samsung Electronics
Product Family — K3K mobile DRAM (LPDDR) component series
Maximum Data Rate — [DATA_NEEDED: Mbps]
Supply Voltage (VDD) — [DATA_NEEDED: core supply voltage]
Package Type — FBGA (Ball Grid Array)
Ball Count — [DATA_NEEDED: package ball count]
Speed Grade Suffix — J (per Samsung speed-grade coding)
Packing Suffix — CT (per Samsung packing-code convention)
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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