K3KL2L20DM-JGCT vs K3LK4L40DM-BGCT 对比
详细并排对比 K3KL2L20DM-JGCT 出自 Samsung Electronics 和 K3LK4L40DM-BGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 量产中规格对比
| 参数 | K3KL2L20DM-JGCT | K3LK4L40DM-BGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $20.80 | $40.50 |
| 存储器类型 | LPDDR5X SDRAM | DRAM (SDRAM component) |
| Density | 48 Gb | [DATA_NEEDED: Density] |
| 存储组织 | x64 | — |
| 数据速率 | 7500 Mbps | [DATA_NEEDED: Data Rate] |
| Supply Voltage (VDD1) | 1.8 V | — |
| Supply Voltage (VDD2) | 1.05 V | — |
| Supply Voltage (VDDQ) | 0.5 V | — |
| Core Voltage Rail | 0.9 V | — |
| 工作温度 | -25C to +85C | [DATA_NEEDED: Operating Temperature Range] |
| 封装 | 441-ball FBGA | — |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | LPDDR5X (JEDEC low-power DRAM interface) | — |
| Product Status | Mass Production | — |
| Generation | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) | — |
| Application Segment | AI devices, automotive, mobile | — |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| MSL 等级 | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |