K3KL4L40EM-BGCU vs K3KL5L50DM-BGCU 对比

详细并排对比 K3KL4L40EM-BGCU 出自 Samsung Electro-Mechanics 和 K3KL5L50DM-BGCU 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electro-Mechanics
K3KL4L40EM-BGCU K3KL4L40EM-BGCU - 12GB LPDDR5X DRAM 8533Mbps | Samsung

K3KL4L40EM-BGCU - 12GB LPDDR5X DRAM 8533Mbps | Samsung

K3KL4L40EM-BGCU ✓ 量产中
Samsung Electronics
K3KL5L50DM-BGCU K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung

K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung

K3KL5L50DM-BGCU ✓ 量产中

规格对比

参数 K3KL4L40EM-BGCU K3KL5L50DM-BGCU
品牌 Samsung Electro-Mechanics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $78.75 $0.00
存储器类型 LPDDR5X DRAM LPDDR5X SDRAM
Density 96 Gbit (12 GB) 128 Gb (16 GB)
存储组织 x64 [DATA_NEEDED: organization (x)]
数据速率 8533 Mbps 8533 Mbps per pin
接口 LPDDR5X (LPDDR5 JEDEC-based) LPDDR5X (JEDEC low-power DRAM interface)
封装 496-ball FBGA [DATA_NEEDED: package ball count / FBGA code]
安装类型 Surface Mount Surface Mount (BGA)
电源电压 [DATA_NEEDED: core supply voltage (VDD)] —
Application Tablet, Smartphone, Wearable Devices —
Product Family Samsung LPDDR5X (K3KL4L40EM series) —
Companion Densities 64 Gbit (K3KL3L30DM-BGCU), 128 Gbit (K3KL5L50DM-BGCU) —
Power Characteristic Ultra-low-power mobile DRAM —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS 状态 unknown unknown
Ball Count 496 —
Storage Class Volatile memory (DRAM) —
Supply Voltage (VDD) — [DATA_NEEDED: VDD voltage]
Prefetch — 16n (LPDDR5/5X architecture)
Power Efficiency — approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page)
CAS 延迟 — [DATA_NEEDED: CAS latency]
Refresh — [DATA_NEEDED: refresh scheme]
Production Status — In production (in stock at distributors)
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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