K3KL5L50DM-BGCU vs K3LK4L40DM-BGCT 对比
详细并排对比 K3KL5L50DM-BGCU 出自 Samsung Electronics 和 K3LK4L40DM-BGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 量产中规格对比
| 参数 | K3KL5L50DM-BGCU | K3LK4L40DM-BGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $40.50 |
| 存储器类型 | LPDDR5X SDRAM | DRAM (SDRAM component) |
| Density | 128 Gb (16 GB) | [DATA_NEEDED: Density] |
| 数据速率 | 8533 Mbps per pin | [DATA_NEEDED: Data Rate] |
| 存储组织 | [DATA_NEEDED: organization (x)] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD voltage] | — |
| 封装 | [DATA_NEEDED: package ball count / FBGA code] | — |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| 接口 | LPDDR5X (JEDEC low-power DRAM interface) | — |
| Prefetch | 16n (LPDDR5/5X architecture) | — |
| Power Efficiency | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) | — |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS Latency] |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS Status] |
| Production Status | In production (in stock at distributors) | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: Moisture Sensitivity Level] |
| Manufacturer | — | Samsung Electronics |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |