K3KL5L50DM-BGCU vs K3LK4L40DM-BGCT 비교
다음의 상세 나란히 비교: K3KL5L50DM-BGCU 제조: Samsung Electronics 및 K3LK4L40DM-BGCT 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 활성사양 비교
| 파라미터 | K3KL5L50DM-BGCU | K3LK4L40DM-BGCT |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | DRAM |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $40.50 |
| 메모리 유형 | LPDDR5X SDRAM | DRAM (SDRAM component) |
| Density | 128 Gb (16 GB) | [DATA_NEEDED: Density] |
| 데이터 속도 | 8533 Mbps per pin | [DATA_NEEDED: Data Rate] |
| 메모리 구성 | [DATA_NEEDED: organization (x)] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD voltage] | — |
| 패키지 | [DATA_NEEDED: package ball count / FBGA code] | — |
| 실장 유형 | Surface Mount (BGA) | Surface Mount |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| 인터페이스 | LPDDR5X (JEDEC low-power DRAM interface) | — |
| Prefetch | 16n (LPDDR5/5X architecture) | — |
| Power Efficiency | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) | — |
| CAS 레이턴시 | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS Latency] |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| RoHS 상태 | unknown | [DATA_NEEDED: RoHS Status] |
| Production Status | In production (in stock at distributors) | — |
| MSL 레벨 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: Moisture Sensitivity Level] |
| Manufacturer | — | Samsung Electronics |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |