K3LK8K80CM-MFCP vs K3LKBKB0BM-MGCP 对比
详细并排对比 K3LK8K80CM-MFCP 出自 Samsung Electronics 和 K3LKBKB0BM-MGCP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3LK8K80CM-MFCP | K3LKBKB0BM-MGCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $46.62 |
| 存储器类型 | LPDDR5 SDRAM | DRAM (LPDDR5 SDRAM) |
| Density | 48 Gbit (6 GB) | — |
| 存储组织 | [DATA_NEEDED: organization (x width)] | 1G x 32 |
| Pin Speed | 6400 Mbps | — |
| Data Rate (package) | 51.2 GB/s (family max) | — |
| 接口 | LPDDR5 (JESD209-5 class low-power DRAM interface) | LPDDR5 x32 |
| 封装 | 315-ball FBGA (MFCP) | FBGA-315 |
| Ball Count | 315 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40 C to +105 C (automotive-grade) | -25C to +85C |
| 电源电压 | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Power Saving vs LPDDR4X | Approximately 20% | — |
| Generation | LPDDR5 (5th generation low-power DRAM) | — |
| Application Grade | Automotive-grade storage chip | — |
| Place of Origin | Johor, Malaysia | — |
| RoHS 状态 | unknown | Compliant |
| 存储容量 | — | 32 Gbit |
| 数据速率 | — | 6400 Mbps per pin |
| Supply Voltage Rails | — | 500 mV, 900 mV, 1.05 V, 1.8 V |
| Technology Generation | — | LPDDR5 (JEDEC LPDDR5 family) |
| Density per Package | — | 4 GB (32 Gbit) |
| Refresh | — | Self-refresh and auto-refresh (LPDDR5 standard) |
| Application Segment | — | Mobile, embedded, industrial computing |
| Standby / Deep Sleep | — | LPDDR5 deep-sleep power states |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |
| Access Time / Latency | — | [DATA_NEEDED: CAS latency] |