K3LK8L80CM-MGCT vs K3LK4L40DM-BGCT 对比
详细并排对比 K3LK8L80CM-MGCT 出自 Samsung Electronics 和 K3LK4L40DM-BGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 量产中规格对比
| 参数 | K3LK8L80CM-MGCT | K3LK4L40DM-BGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $40.50 |
| 存储器类型 | LPDDR5X SDRAM | DRAM (SDRAM component) |
| Density | 32 Gbit (4 GB) | [DATA_NEEDED: Density] |
| 存储组织 | x32 | — |
| Max Data Rate | 7500 Mbps | — |
| Supply Voltages | 0.5 V, 900 mV, 1.05 V, 1.8 V (multi-rail) | — |
| 封装 | FBGA-315 (315-ball) | — |
| 工作温度 | -25C to +85C | [DATA_NEEDED: Operating Temperature Range] |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| 接口 | LPDDR5X (JEDEC low-power DDR) | — |
| Power Efficiency | ~25% improvement vs LPDDR5 | — |
| Application Class | Mobile, PC, automotive, on-device AI | — |
| RoHS 状态 | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS Status] |
| Speed Grade Suffix | CM-MGCT | — |
| Package Family | FBGA -> BGA -> surface mount | — |
| Typical End Products | Smartphones, tablets, edge AI devices | — |
| Refresh / Standby Modes | Self-refresh, deep power-down (per LPDDR5X protocol) | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: Moisture Sensitivity Level] |
| Manufacturer | — | Samsung Electronics |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| 数据速率 | — | [DATA_NEEDED: Data Rate] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |