K3LK8L80CM-MGCT - LPDDR5X 32Gbit DRAM FBGA-315 | Samsung
料号： K3LK8L80CM-MGCT ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K3LK8L80CM-MGCT 概述
LPDDR5X (Low Power Double Data Rate 5 eXtended) DRAM is the extended-speed successor to LPDDR5 in the JEDEC low-power memory hierarchy: SDRAM -> DDR SDRAM -> LPDDR family -> LPDDR5 -> LPDDR5X. Compared with LPDDR5, LPDDR5X raises the interface data rate ceiling and improves power efficiency, delivering roughly 25% better energy-per-bit in typical workloads.
Key features include the 32 Gbit x32 organization enabling 4 GB per package, a 7500 Mbps maximum data rate for peak bandwidth up to 30 GB/s per 32-bit channel in 7500-class configurations, and a low-voltage I/O environment (0.5 V-class VDDQ) that reduces dynamic switching power. The device supports the standard LPDDR5X command set including bank group operations and on-die termination.
Architecturally, the device uses Samsung advanced DRAM process technology with an 8-channel-independent bank architecture, deep power-down and self-refresh states for standby power management, and speed-grade binning identified by the CM-MGCT ordering suffix (commercial temperature range). Operation is specified from -25C to +85C, which extends below the conventional 0C floor to support outdoor and automotive-adjacent use cases.
Typical applications include flagship smartphone application-processor memory, tablets and laptops with on-package memory, AI edge accelerators and on-device AI inference, and automotive infotainment platforms needing dense, fast, low-power memory.
Design consideration: LPDDR5X routing requires strict length matching and a fly-by-free point-to-point topology; verify the SoC memory controller supports the target 7500 Mbps speed bin and implement the multi-rail power-up sequence (VDD1 -> VDD2/VDDQ) per the manufacturer datasheet.
This page synthesizes distributor stock data, drop-in family alternatives, and practical LPDDR5X design notes not found in the raw distributor listings.
直接替换替代料： K3LK8L80CM-MGCT ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K3LK8L80CM-MGCT （相同外形与封装尺寸） ——差异在于 Density, Interface, Package, Memory Type, Organization.
快速对比工具——选择替代料号进行并排对比：
K3KL7L70EM-MGCU
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$12 / 个
查看数据手册 →K3LK4L40DM-BGCT
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$40.5 / 个
查看数据手册 →K3KL3L30CM-BGCT
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →K3LKCKC0BM-MGCP
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$65.625 / 个
查看数据手册 →K3LKBKB0BM-MGCP
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$46.62 / 个
查看数据手册 →K3LK8L80CM-MGCT 最大额定值与电气特性
| 存储器类型 | LPDDR5X SDRAM |
| Density | 32 Gbit (4 GB) |
| 存储组织 | x32 |
| Max Data Rate | 7500 Mbps |
| Supply Voltages | 0.5 V, 900 mV, 1.05 V, 1.8 V (multi-rail) |
| 封装 | FBGA-315 (315-ball) |
| 工作温度 | -25C to +85C |
| 安装类型 | Surface Mount (BGA) |
| 接口 | LPDDR5X (JEDEC low-power DDR) |
| Power Efficiency | ~25% improvement vs LPDDR5 |
| Application Class | Mobile, PC, automotive, on-device AI |
| RoHS 状态 | Compliant (per JLCPCB listing) |
| Speed Grade Suffix | CM-MGCT |
| Package Family | FBGA -> BGA -> surface mount |
| Typical End Products | Smartphones, tablets, edge AI devices |
| Refresh / Standby Modes | Self-refresh, deep power-down (per LPDDR5X protocol) |
K3LK8L80CM-MGCT fbga -> bga -> surface mount 引脚配置指南
K3LK8L80CM-MGCT（fbga -> bga -> surface mount 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K3LK8L80CM-MGCT.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K3LK8L80CM-MGCT 适用于 6 应用s: Flagship Smartphone Memory, On-Device AI Inference, Automotive Infotainment and Cockpit, Tablets and Thin-Client Laptops, Edge AI Modules and Smart Cameras, Networking and 5G Equipment.
Flagship Smartphone Memory
Flagship smartphones pair high-core-count application processors with a single wide LPDDR5X channel, and the K3LK8L80CM-MGCT fits this role directly: its 7500 Mbps data rate provides roughly 30 GB/s of peak bandwidth on a 32-bit bus, enough to feed CPU clusters, GPUs, and NPUs without stalling. The multi-rail architecture (1.8 V VDD1, 1.05 V/0.5 V-class I/O domains) minimizes dynamic power, and the ~25% efficiency improvement over LPDDR5 extends battery life under memory-heavy workloads such as 8K video and gaming. Implemented as PoP or on-board mounting, the FBGA-315 package is placed adjacent to the SoC with length-matched point-to-point routing; deep power-down and self-refresh states keep standby drain minimal during idle.
推荐
On-Device AI Inference
On-device AI inference is bandwidth-bound: transformer and CNN models stream weights from DRAM to the NPU every layer, so memory throughput directly sets tokens-per-second and frames-per-second. The K3LK8L80CM-MGCT addresses this with up to 7500 Mbps per pin (~30 GB/s peak on x32) and a 32 Gbit (4 GB) capacity that holds quantized mid-size models locally. Its -25C to +85C operating range supports edge enclosures without active cooling. In practice the device sits on the NPU SoC's dedicated LPDDR5X port; designers should enable controller features such as bank-group parallelism and QoS-based arbitration so NPU reads are not starved by display or camera traffic, and verify the SoC's supported speed bin matches the 7500 Mbps class.
推荐
Automotive Infotainment and Cockpit
Automotive cockpit SoCs driving multiple displays, surround-view camera fusion, and voice assistants need dense, fast, low-power DRAM, and the K3LK8L80CM-MGCT's extended -25C to +85C range covers most in-cabin thermal envelopes. Distributor descriptions explicitly list automotive systems among target applications. Its 7500 Mbps bandwidth supports seamless multi-display rendering, while the low-voltage I/O reduces DRAM power share in EV energy budgets. Design considerations: confirm the automotive qualification status of the exact order code with Samsung (standard LPDDR5X is not inherently AEC-Q100), design power rails with cold-crank and load-dump transients in mind, and implement retention strategies (self-refresh during standby) consistent with the infotainment power management plan.
推荐
Tablets and Thin-Client Laptops
Thin tablets and entry laptops use one or two LPDDR5X channels with memory mounted on-board to save height and power versus socketed DDR. The K3LK8L80CM-MGCT provides 4 GB per package in x32 organization, so a two-channel (64-bit) configuration yields 8 GB and up to 60 GB/s peak bandwidth - ample for productivity and media workloads. The ~25% power-efficiency gain over LPDDR5 translates into measurable battery-life extension, and self-refresh preserves OS state during modern-standby. Layout practice: fly the two channels length-matched on inner layers with solid reference planes, and use the SoC's training routines to compensate at-boot for PVT variation at the 7500 Mbps operating point.
推荐
Edge AI Modules and Smart Cameras
Smart-camera and edge-AI modules integrate SoC plus LPDDR5X on a small SOM, processing video analytics at the sensor. The K3LK8L80CM-MGCT's 4 GB capacity stores model weights plus frame buffers for multi-stream analytics, and its 7500 Mbps interface feeds ISP and NPU pipelines in real time; the extended -25C floor suits outdoor enclosures. Because these modules dissipate everything through a small heatsink or conduction plate, the DRAM's low-voltage I/O and deep power-down states are essential to stay within a 5-10 W total module budget. Verify the camera SoC's memory-controller PHY supports LPDDR5X speed bins and enable periodic refresh with temperature-compensated refresh (TCR) for the full industrial temperature span.
推荐
Networking and 5G Equipment
5G small cells, network processors, and edge gateways need fast packet-buffer and control-plane memory with low power, and LPDDR5X fills this niche where full DDR5 DIMMs are overkill. The K3LK8L80CM-MGCT offers 4 GB in one package with ~30 GB/s peak bandwidth for table lookups, queuing, and dataplane scratch memory. The -25C to +85C range fits outdoor telecom cabinets, and the low-voltage rails reduce the power draw budgeted to always-on equipment. Design notes: telecom platforms often require redundant-refresh handling for elevated ambient temperatures, ECC-capable controllers (inline ECC on LPDDR5X) for carrier-grade reliability, and careful rail sequencing tied to the system's hot-swap power tree.
推荐
推荐产品汇总
工程参考数据： K3LK8L80CM-MGCT ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K3KL7L70EM-MGCU | K3LK4L40DM-BGCT | K3LKCKC0BM-MGCP | K3LKBKB0BM-MGCP | K3KL3L30CM-BGCT |
|---|---|---|---|---|---|---|
| Package | FBGA-315 | FBGA (EM suffix - verify ball count) | FBGA (BGC suffix - different ball count) | FBGA (MGC family - same package code family) | FBGA (MGC family - same package code family) | FBGA (BGC suffix - different ball count) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
关键差异点
- LPDDR5X speed class up to 7500 Mbps （对比 K3LK4L40DM-BGCT)
- Extended low-temperature floor （对比 K3KL7L70EM-MGCU)
- ~25% power-efficiency gain over LPDDR5 （对比 K3LKCKC0BM-MGCP)
- MGC package-code family consistency （对比 K3LKBKB0BM-MGCP)
设计说明
LPDDR5X at 7500 Mbps is extremely sensitive to channel loss and skew. Use point-to-point routing with length matching within ±0.5 mm on CA and DQ byte groups, maintain a solid reference plane under every signal layer, and avoid via stubs. Target single-ended impedance of 40 ohms as per typical LPDDR5X ODT settings and simulate the channel with IBIS-AMI models from Samsung before committing the PCB stackup. SoC PHY training can compensate static offset but cannot recover from gross impedance discontinuities.
The device uses a multi-rail system (1.8 V VDD1, 1.05 V/0.5 V-class VDDQ/VDD2, 900 mV domain per distributor listings). Power up VDD1 before VDD2/VDDQ and respect the datasheet sequence timing to avoid latch-up. Size the VDDQ regulator for fast load transients - LPDDR5X current steps of several hundred mA occur on bus turnaround. Estimated: a 4 GB device at 7500 Mbps with 30% read activity can draw on the order of 1 A from the VDDQ rail; decouple with bulk ceramic plus multiple 100 nF balls-adjacent capacitors per the datasheet decoupling guidance.
FBGA mobile DRAM has no heatsink; heat exits through the ball side and package top. In PoP stacks, the LPDDR sits beneath the SoC and sees its junction heat - verify junction temperature stays below the +85C specification under worst-case SoC SoC TDP plus DRAM activity. Estimated: with 0.5-1 W DRAM dissipation and 15-20 C/W effective theta_JA in a PoP stack, expect 8-20 C of self-heating, so budget ambient accordingly. Use thermal vias and copper pours under the device on non-PoP boards.
Order-code suffixes encode speed bin, package, and temperature range; the K3L LPDDR5X family includes many near-identical codes (CM vs KC vs KB speed bins, MGC vs EM vs BGC packages). Ordering or substituting a different suffix than validated can produce a board that trains inconsistently or fails at the 7500 Mbps operating point. Lock the exact MPN in the BOM, and verify the SoC memory controller's qualified speed-bin list before second-sourcing within the family.
合规信息
RoHS compliance confirmed via JLCPCB listing for K3KL8L80CM-MGCT. Other declarations should be confirmed from Samsung official environmental documents for the exact order code.
