K3LKBKB0BM-MGCP vs K3K9K90BM-MGCP 对比

详细并排对比 K3LKBKB0BM-MGCP 出自 Samsung Electronics 和 K3K9K90BM-MGCP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K3LKBKB0BM-MGCP K3LKBKB0BM-MGCP - 32Gbit LPDDR5 DRAM 6400Mbps | Samsung

K3LKBKB0BM-MGCP - 32Gbit LPDDR5 DRAM 6400Mbps | Samsung

K3LKBKB0BM-MGCP ✓ 量产中
Samsung Electronics
K3K9K90BM-MGCP K3K9K90BM-MGCP - LPDDR5 DRAM | Samsung Semiconductor

K3K9K90BM-MGCP - LPDDR5 DRAM | Samsung Semiconductor

K3K9K90BM-MGCP ✓ 量产中

规格对比

参数 K3LKBKB0BM-MGCP K3K9K90BM-MGCP
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $46.62 $47.15
存储器类型 DRAM (LPDDR5 SDRAM) LPDDR5 SDRAM (CMOS)
存储容量 32 Gbit —
存储组织 1G x 32 [DATA_NEEDED: density and organization]
数据速率 6400 Mbps per pin —
Supply Voltage Rails 500 mV, 900 mV, 1.05 V, 1.8 V —
接口 LPDDR5 x32 —
封装 FBGA-315 PBGA (Plastic Ball Grid Array)
安装类型 Surface Mount Surface Mount
工作温度 -25C to +85C [DATA_NEEDED: operating temperature range]
Technology Generation LPDDR5 (JEDEC LPDDR5 family) —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Density per Package 4 GB (32 Gbit) —
Refresh Self-refresh and auto-refresh (LPDDR5 standard) Self-refresh with per-bank refresh support (LPDDR5 standard)
Application Segment Mobile, embedded, industrial computing —
Standby / Deep Sleep LPDDR5 deep-sleep power states —
MSL 等级 [DATA_NEEDED: MSL level] —
Access Time / Latency [DATA_NEEDED: CAS latency] —
Pin Speed — Up to 6400 Mbps (family maximum per Samsung LPDDR5 page)
Interface Width — x32 (family standard for K3K/K3L BM packages)
Ball Count — [DATA_NEEDED: ball count]
Supply Voltage (VDD) — [DATA_NEEDED: VDD voltage]
Power Saving vs LPDDR4X — Approximately 20% (Samsung published figure)
Max Bandwidth — Up to 51.2 GB/s (family maximum per Samsung LPDDR5 page)
Moisture Sensitivity Level — [DATA_NEEDED: MSL level]
Clocking — WCK (word clock) architecture
Standards — JEDEC LPDDR5

数据手册与资源

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