K4A4G085WD-BCRC vs K3LK4L40DM-BGCT 对比
详细并排对比 K4A4G085WD-BCRC 出自 Samsung Electronics 和 K3LK4L40DM-BGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 量产中规格对比
| 参数 | K4A4G085WD-BCRC | K3LK4L40DM-BGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.58 | $40.50 |
| Memory Density | 4 Gbit | — |
| 存储组织 | 512M x 8 | — |
| 存储器类型 | DDR4 SDRAM (D-die) | DRAM (SDRAM component) |
| 数据速率 | 2400 Mb/s (PC2400) | [DATA_NEEDED: Data Rate] |
| 电源电压 | 1.2 V | — |
| 封装 | FBGA-78 (TFBGA) | — |
| Number of Terminals | 78 | — |
| 接口 | Parallel | — |
| Access Mode | Multi-bank page burst | — |
| 安装类型 | Surface Mount | Surface Mount |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS Latency] |
| 工作温度范围 | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| MSL 等级 | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: Moisture Sensitivity Level] |
| Manufacturer | — | Samsung Electronics |
| Density | — | [DATA_NEEDED: Density] |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| 工作温度 | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |