K4A4G165WD-BCPB vs MT40A256M16GE-075E:B 对比
详细并排对比 K4A4G165WD-BCPB 出自 Samsung Electronics 和 MT40A256M16GE-075E:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ 量产中规格对比
| 参数 | K4A4G165WD-BCPB | MT40A256M16GE-075E:B |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $3.95 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| 数据速率 | 2133 MT/s | 2666 MT/s (DDR4-2666) |
| Core Voltage | 1.2 V | — |
| 封装 | FBGA-96 | 96-FBGA (9 x 14 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Die Generation | D-die | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | — |
| 接口 | DDR4 (synchronous, source-synchronous strobe) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for standard grade] |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| RoHS 状态 | Compliant (lead-free suffix) | — |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| 存储容量 | — | 4 Gbit |
| Memory Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| Internal Banks | — | 16 |
| I/O Type | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable generation |
| Special Features | — | Temperature controlled refresh (TCR) |
| Access Time | — | [DATA_NEEDED: CAS latency / access time] |