K4A8G085WB-BICR vs H5AN8G6NDJR-XNC 对比
详细并排对比 K4A8G085WB-BICR 出自 Samsung Electronics 和 H5AN8G6NDJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ 量产中
规格对比
| 参数 | K4A8G085WB-BICR | H5AN8G6NDJR-XNC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.25 | $55.68 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 1G x 8 | — |
| 数据速率 | 2400 Mbps | 3200 Mbps |
| 电源电压 | 1.2 V (VDD/VDDQ) | — |
| Number of Banks | 16 | — |
| Refresh Cycles | 8192 | — |
| 封装 | 78-ball FBGA | FBGA-96 (13x7.5 mm) |
| 引脚数量 | 78 | — |
| 安装类型 | Surface Mount | — |
| Temperature Grade | Industrial (I-grade) | — |
| 工作温度范围 | [DATA_NEEDED: exact temperature range for BICR industrial suffix] | — |
| Die / Process | Samsung 8Gb B-die DDR4 | — |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | Yes |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported | — |
| 存储容量 | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| 无卤 | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |