K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
料号： K4A8G085WB-BICR ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $7.2 | $7.20 |
| 10 | $6.55 | $65.50 |
| 100 | $5.8 | $580.00 |
| 500 | $5.1 | $2,550.00 |
| 1,000 | $4.65 | $4,650.00 |
| 3,000 | $4.25 | $12,750.00 |
K4A8G085WB-BICR 概述
An SDRAM (synchronous dynamic random-access memory) is a type of volatile memory that synchronizes data transfers with the system clock. DDR4 SDRAM, the fourth generation of double-data-rate memory, uses a 1.2V supply and transfers data on both edges of the clock, doubling effective bandwidth compared to previous generations. In the memory hierarchy, this device sits at the component level beneath registered DIMM modules and is controlled by a memory controller in a CPU, FPGA, or SoC to form the main system memory or high-bandwidth data buffer.
Key features include 1G x 8 organization, 2400Mbps data rate (DDR4-2400), 8192 refresh cycles per bank, 16 banks, and 78-ball FBGA surface-mount construction. The industrial temperature grade enables use in equipment exposed to a wider temperature range than standard commercial DDR4. The x8 data path provides a good balance between density and signal count, allowing eight devices to be placed on a 64-bit memory bus.
Technical depth: Samsung's B-die is widely documented for good timing margins and overclocking headroom; for DRAM controllers, the address and command timing are defined by the DDR4 JEDEC specification. Refresh management is essential because each of the 8192 rows must be refreshed within the tREFI interval, so the memory controller must handle periodic refresh commands. Signal integrity is strongly dependent on carefully routed DQS/DQ groups and termination, which is why high-speed DDR4 layout is critical.
Typical applications include server and data-center memory modules, industrial single-board computers, networking line cards, video surveillance recorders, and FPGA-based edge-AI acceleration. The industrial grade is particularly suited for outdoor telecom cabinets, factory automation, and transportation infrastructure where ambient temperature can vary outside the commercial range.
Design consideration: always verify the exact temperature grade and timing parameters from the Samsung K4A8G085WB datasheet before production; the BICR suffix is industrial, but the precise speed and temperature columns should be confirmed from the ordering information.
直接替换替代料： K4A8G085WB-BICR ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4A8G085WB-BICR （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Operating Temperature, Burst Length, Density.
快速对比工具——选择替代料号进行并排对比：
K4A8G085WB-BCRC
✅ 直接替换✓ 有现货
$6.8 / 个
查看数据手册 →K4A8G085WB-BIRC
✅ 直接替换✓ 有现货
$6.5625 / 个
查看数据手册 →K4A8G085WB-BITD
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$3.8 / 个
查看数据手册 →K4A8G085WB-BIWE
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.5 / 个
查看数据手册 →K4A8G085WB-BICH
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$4.96 / 个
查看数据手册 →MT40A1G8SA-062E
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.05 / 个
查看数据手册 →H5AN8G6NDJR-XNC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$55.6818 / 个
查看数据手册 →MT40A1G8SA-075:E
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.3 / 个
查看数据手册 →K4A8G085WB-BICR 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Density | 8 Gb |
| 存储组织 | 1G x 8 |
| 数据速率 | 2400 Mbps |
| 电源电压 | 1.2 V (VDD/VDDQ) |
| Number of Banks | 16 |
| Refresh Cycles | 8192 |
| 封装 | 78-ball FBGA |
| 引脚数量 | 78 |
| 安装类型 | Surface Mount |
| Temperature Grade | Industrial (I-grade) |
| Die / Process | Samsung 8Gb B-die DDR4 |
| Speed Grade | DDR4-2400 (PC4-19200) |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported |
K4A8G085WB-BICR 78-ball fbga 引脚配置指南
K4A8G085WB-BICR（78-ball fbga 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K4A8G085WB-BICR.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K4A8G085WB-BICR 适用于 6 应用s: Server and Data-Center DIMM, Industrial Embedded Single-Board Computer, FPGA Accelerator and Edge AI, Network Router and Switch, Video Surveillance DVR, Telecom Baseband Unit.
Server and Data-Center DIMM
The K4A8G085WB-BICR is the core DRAM component for unbuffered or registered DIMMs in server, cloud, and data-center platforms. Its 1G x 8 organization lets eight or nine devices form a 64-bit/72-bit rank, while 2400Mbps operation delivers high bandwidth per DIMM rank. The 1.2V supply reduces line-card power consumption. Recommended products include STM32F746BET6 for prototype memory-controller testing and XC7Z020 as an FPGA/SoC with DDR4 controller evaluation support.
推荐
Industrial Embedded Single-Board Computer
Industrial SBCs often operate in equipment enclosures without tight climate control, so the K4A8G085WB-BICR industrial temperature grade is a primary selection reason. The 78-FBGA package and 1.2V operation allow dense placement on mechanically rugged boards, while 2400Mbps data rate supports Ethernet, fieldbus, and HMI processing. A PCB can reuse Samsung B-die layout guidelines, reducing bring-up time. Recommended products include STM32F746BET6 as the memory controller and STM32H747BGT6 for higher-performance dual-core designs.
推荐
FPGA Accelerator and Edge AI
FPGA-based edge-AI accelerators require low-latency, high-bandwidth memory for inference data, and the K4A8G085WB-BICR delivers that through a standard DDR4 interface on Xilinx/AMD and Intel FPGA boards. With a 16-bank architecture and 8192 refresh cycles, the memory controller can schedule refreshes to avoid critical inference reads. At 2400Mbps, one x8 rank provides roughly 2.4GB/s peak bandwidth. The industrial grade supports field-deployed smart cameras and gateways. Recommended products include XC7Z020 and XCKU5P-2FFVB676I.
推荐
Network Router and Switch
Network equipment line cards buffer routing tables, ACLs, and packet descriptors; the K4A8G085WB-BICR's 8Gb capacity and x8 organization pair well with commodity DDR4 buses. The 2400Mbps throughput gives packet processors fast access to memory, while the 78-ball FBGA keeps a small footprint on multilayer boards. Routers deployed in remote telecom cabinets benefit from the industrial temperature grade. Recommended products include MT40A512M16JY-075E as a companion memory and STM32H747BGT6 for control-plane management.
推荐
Video Surveillance DVR
High-resolution video recorders continuously write HD/4K streams, requiring predictable SDRAM bandwidth and power efficiency. The K4A8G085WB-BICR, with 2400Mbps and 1.2V, can buffer multiple video channels from an encoder/decoder SoC. Its 1G x 8 organization permits simple chaining of eight devices to create 64-bit memory arrays. The industrial temperature grade also allows installation in unventilated security cabinets. Recommended products include STM32F746BET6 for HDMI/display control and MT40A512M16LY-075 for frame buffering.
推荐
Telecom Baseband Unit
Telecom baseband units process many parallel data streams under strict ambient temperature limits, so the K4A8G085WB-BICR industrial temperature grade is a significant advantage. The DDR4 interface provides high bandwidth for PHY processing, while the x8 organization enables conservative layout in outdoor radio equipment. The 1.2V supply reduces thermal load in sealed enclosures. Pair with H5AN8G6NDJR-XNC or MT40A1G8SA-062E after timing verification for system-level memory expansion. Recommended products include XCKU5P-2FFVB676I as the baseband accelerator.
推荐
推荐产品汇总
工程参考数据： K4A8G085WB-BICR ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4A8G085WB-BCRC | K4A8G085WB-BIRC | MT40A1G8SA-062E | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Package | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Refresh Cycles | 8192 | 8192 | 8192 | 8192 | 8192 |
关键差异点
- Industrial temperature grade in Samsung B-die x8 family （对比 K4A8G085WB-BCRC)
- xFinity data path in standard 78-FBGA package （对比 K4A8G045WB-BCPB)
- Samsung B-die ecosystem and controller support （对比 MT40A1G8SA-062E)
设计说明
Place a 0.1 uF ceramic capacitor close to each VDD/VDDQ ball and a 4.7 uF bulk capacitor near the device. DDR4 uses a 1.2V supply for both core and I/O; good high-frequency decoupling on the 1.2V rail is essential to keep the supply impedance low and avoid data corruption. Follow the Samsung K4A8G085WB layout guidelines for the VDD and VSS pin distribution.
Route DQ, DQS, and DM groups as matched-length traces with continuous reference planes. For a 2400Mbps x8 DDR4 interface, each DQS/DQ group should be length-matched within a few millimeters and the impedance should be controlled to 40-50 ohms. Avoid vias stubs on the data lines and include series termination resistors if recommended by the board-level DDR4 simulation.
The industrial temperature grade supports wider ambient ranges, but the device still dissipates power during refresh and read/write bursts. Provide a solid thermal path from the FBGA package to the PCB ground and thermal relief vias, especially in sealed telecom or industrial enclosures. Confirm the actual temperature range from the datasheet suffix table before committing to extreme ambient specifications.
合规信息
Samsung memory products are generally lead-free and RoHS-compliant, but exact certificate should be obtained from the manufacturer datasheet or product page.
