K4A8G085WC-BCRC vs K4A8G085WB-BCRC 对比
详细并排对比 K4A8G085WC-BCRC 出自 Samsung Electronics 和 K4A8G085WB-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WC-BCRC | K4A8G085WB-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.30 | $6.80 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| 存储组织 | 1G x 8 | 1G x 8 |
| 电源电压 | 1.2 V | 1.2 V |
| 数据速率 | 2400 Mbps (DDR4-2400) | 2400 Mbps |
| 封装 | 78-ball FBGA (TFBGA) | 78-ball FBGA |
| Terminal Pitch | 0.8 mm | — |
| 安装类型 | Surface Mount | — |
| 工作温度 | 0C to +95C | 0°C to 85°C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| RoHS 状态 | Compliant | — |
| Refresh | Auto/Self refresh | — |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Access Time | — | 0.175 ns |
| Technology | — | CMOS |
| Burst Length | — | 8 and 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| RoHS | — | Compliant |