K4A8G085WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
料号： K4A8G085WC-BCRC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $5.54 | $5.54 |
| 10 | $5.2 | $52.00 |
| 100 | $4.9 | $490.00 |
| 500 | $4.6 | $2,300.00 |
| 1,000 | $4.3 | $4,300.00 |
K4A8G085WC-BCRC 概述
DRAM (Dynamic Random Access Memory) is the workhorse volatile memory of modern computing: each bit is stored as charge on a capacitor cell that must be periodically refreshed. DDR4 SDRAM is the fourth generation of double-data-rate synchronous DRAM, sitting within the memory hierarchy between caches/registers and storage, and is used as main memory in servers, PCs, embedded controllers, and networking equipment. Compared with DDR3, DDR4 operates at a lower 1.2V core voltage, offers higher densities (up to 16Gb per die), faster data rates (up to 3200 Mbps in this family), and adds bank groups for improved internal parallelism.
Key features of the K4A8G085WC-BCRC include 8Gbit density organized as 1G x 8, a 1.2V supply that reduces power roughly 25% versus DDR3, 2400 Mbps operation, and functional support for auto precharge, asynchronous reset, CRC and CA parity features, ZQ calibration, dynamic on-die termination (ODT), and data mask functionality per Samsung's product listings. The FBGA-78 ball-grid package provides excellent electrical performance for high-speed memory interfaces with short, controlled-impedance ball bonds.
Architecturally, DDR4 introduces bank groups so that multiple banks can be accessed with staggered column addressing, raising effective bandwidth at the same internal core speed. On-die termination and ZQ calibration maintain signal integrity across the address/command and data buses at 2400 Mbps transfer rates, while the asynchronous reset ball allows the memory controller to reset the device without a power cycle.
Typical applications include embedded processor and SoC main memory (industrial PCs, networking appliances, set-top boxes), desktop and server DIMM modules, and FPGA memory subsystems where a soldered-down 8Gb x8 DDR4 component is required.
Design consideration: down-clocking or up-clocking across speed bins (2400/2666/3200 MT/s) requires strict JEDEC timing validation in U-Boot or BIOS; the -BCRC speed bin must match the memory controller's supported rates.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： K4A8G085WC-BCRC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4A8G085WC-BCRC （相同外形与封装尺寸） ——差异在于 Data Rate, Package, Burst Length, Interface, Density.
快速对比工具——选择替代料号进行并排对比：
K4A8G085WC-BCPB
✅ 直接替换✓ 有现货
$2.95 / 个
查看数据手册 →K4A8G085WC-BCTD
✅ 直接替换✓ 有现货
$50.85 / 个
查看数据手册 →K4A8G085WC-BIWE
✅ 直接替换✓ 有现货
$6.29 / 个
查看数据手册 →K4A8G085WB-BCRC
✅ 直接替换✓ 有现货
$6.8 / 个
查看数据手册 →K4A8G165WB-BCRC
✅ 直接替换✓ 有现货
$12.57 / 个
查看数据手册 →K4A8G085WC-BCRC 规格参数
| 存储器类型 | DDR4 SDRAM |
| Density | 8 Gbit |
| 存储组织 | 1G x 8 |
| 电源电压 | 1.2 V |
| 数据速率 | 2400 Mbps (DDR4-2400) |
| 封装 | 78-ball FBGA (TFBGA) |
| Terminal Pitch | 0.8 mm |
| 安装类型 | Surface Mount |
| 工作温度 | 0C to +95C |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| Dynamic On-Die Termination | Yes |
| Data Mask Function | Yes |
| RoHS 状态 | Compliant |
| Refresh | Auto/Self refresh |
K4A8G085WC-BCRC 78-ball fbga (tfbga) 引脚配置指南
K4A8G085WC-BCRC（78-ball fbga (tfbga) 封装）的引脚配置。 引脚编号、功能和连接图在制造商数据手册中定义。请参阅该手册以了解确切的封装尺寸和焊接指南。
暂无详细引脚数据： K4A8G085WC-BCRC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K4A8G085WC-BCRC 适用于 6 应用s: Embedded Processor Main Memory, Desktop and Server DDR4 DIMM Modules, FPGA and ASIC Memory Subsystems, Networking and Communication Equipment, Set-Top Box and Smart Home Media Hubs, Test and Measurement Instrumentation.
Embedded Processor Main Memory
The K4A8G085WC-BCRC is a natural fit as soldered-down main memory for industrial SoCs and embedded x86/ARM processors that expose a DDR4-2400 memory controller. Its 8Gb density in a single 1G x 8 component lets designers build 1GB to 4GB systems with a handful of chips, while the 1.2V supply cuts DRAM power roughly 25% versus DDR3 - critical for fanless industrial PCs. Mounted as a single component on the PCB, it supports auto precharge, asynchronous reset, and ZQ calibration that simplify controller bring-up. Performance consideration: at 2400 Mbps the address/command bus should follow fly-by routing with dynamic ODT configured in the controller; the 0C to +95C rating covers typical commercial-industrial enclosures, but use the BIWE variant for -40C ambient designs.
推荐
Desktop and Server DDR4 DIMM Modules
Samsung's WC-die 8Gb x8 DDR4 components are foundational building blocks for UDIMM, RDIMM, and SODIMM module assembly. With eight or nine K4A8G085WC-BCRC chips a module maker produces an 8GB DDR4-2400 unbuffered DIMM; the CRC and CA parity features align with server-class error-management expectations when paired with appropriate controllers. The 78-ball FBGA provides the short ball bonds and controlled impedance needed for reliable 2400 Mbps signaling along the module's multi-drop data lines. Performance consideration: module-level timing derives from the slowest component, so mixing bins is not permitted - all chips on a module must share the BCRC 2400 Mbps grade, and registered modules additionally require a register clock driver (e.g., PLL reference) between controller and DRAM address/command bus.
推荐
FPGA and ASIC Memory Subsystems
The K4A8G085WC-BCRC integrates cleanly with FPGA hard DDR4 memory controllers rated at 2400 MT/s. The x8 organization with a single DQS/DQS# strobe pair and DM data mask per byte simplifies read/write leveling compared with x16 parts that carry two strobe pairs, and the 8Gb density provides buffer depth for packet processing, video frame storage, or ML inference workloads on a single chip. ZQ calibration and dynamic on-die termination maintain signal integrity across the SSTL12/Pseudo-open-drain style interface. Performance consideration: budget the controller's calibration time for ZQ and read-leveling at startup, and route DQ/DQS as length-matched groups; the 0.8 mm ball pitch supports escape routing on 6+ layer boards typical of FPGA designs.
推荐
Networking and Communication Equipment
Routers, switches, and network appliances use 8Gb DDR4 components for packet buffering, routing tables, and control-plane software. The K4A8G085WC-BCRC's 2400 Mbps rate provides 19.2 GB/s peak bandwidth per chip at DDR4-2400 (single x8 channel), sufficient for control-plane memory in enterprise networking hardware, while the 1.2V operation keeps continuous-power budgets manageable in always-on equipment. CRC support aids data integrity in electrically noisy backplane environments, and the asynchronous reset ball allows quick recovery logic without full power cycling. Performance consideration: sustained throughput depends on bank-group interleaving; configure the memory scheduler to exploit DDR4's bank-group structure, and verify the 0C to +95C rating against telecom equipment ambient specifications.
推荐
Set-Top Box and Smart Home Media Hubs
Media-hub SoCs require 1GB-2GB of DDR4 for OS, decode buffers, and graphics memory, making the K4A8G085WC-BCRC's 8Gb x8 single-chip density a compact choice. Its 2400 Mbps operation supports multiple simultaneous 1080p video streams with headroom, and the 1.2V rail integrates with typical PMIC-integrated SoC power trees that generate DDR4 core and VPP voltages. The FBGA-78 package keeps the memory footprint small for slim STB form factors, and soldered mounting improves reliability versus sockets in consumer devices subject to thermal cycling. Performance consideration: coordinate the SoC's DDR PHY training at 2400 MT/s with proper ODT settings, and place the DRAM within the maximum trace-length budget specified by the SoC layout guide for fly-by address routing.
推荐
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with high sustained bandwidth. The K4A8G085WC-BCRC's 8Gb capacity allows long record lengths (for example, 8 gigabytes of samples organized across eight chips), while 2400 Mbps transfer rate and DDR4's bank-group architecture sustain the streaming rates needed for continuous acquisition. The CRC feature and on-die termination contribute to data integrity in instruments where measurement accuracy is paramount, and ZQ calibration ensures stable output impedance across temperature. Performance consideration: instrument firmware should validate JEDEC timing when selecting the 2400 Mbps bin versus faster alternatives; for extended-temperature bench environments within 0C to +95C the BCRC is appropriate, while portable field instruments benefit from the BIWE industrial-grade variant.
推荐
推荐产品汇总
工程参考数据： K4A8G085WC-BCRC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4A8G085WC-BCPB | K4A8G085WC-BCTD | K4A8G085WC-BIWE | K4A8G165WB-BCRC |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 512M x 16 |
| Data Rate | 2400 Mbps | 2400 Mbps | 2666 Mbps | 3200 Mbps | 2400 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | -40C to +95C | 0C to +95C |
| Controller Compatibility | DDR4-2400 native | DDR4-2400 native - none needed | JEDEC timing re-validation if down-clocked | JEDEC timing re-validation if down-clocked | Firmware/organization rework required (x16) |
关键差异点
- Lowest-cost same-die option in the WC family （对比 K4A8G085WC-BCTD)
- Cost-optimized versus industrial temperature grade （对比 K4A8G085WC-BIWE)
- Single-strobe x8 interface simplifies PHY bring-up （对比 K4A8G165WB-BCRC)
设计说明
At 2400 Mbps, route DQ/DQS/DM traces as length-matched groups (intra-byte-lane skew typically under 10 mil per datasheet routing rules of the memory controller vendor) and use fly-by routing for address/command with dynamic ODT enabled. The K4A8G085WC-BCRC's ZQ calibration ball requires an external precision resistor (RZQ, typically 240 ohm 1%) to ground - place it close to the ball with a low-inductance ground return. Refer to Samsung's DDR4 component datasheet and your controller vendor's layout guide (e.g., TI/Hardware Design Guide for DDR4) for topology specifics.
The K4A8G085WC-BCRC uses a 1.2V core (VDD/VDDQ) supply; some Samsung DDR4 generations also specify a 2.5V VPP rail for cell-charge pumping - confirm both rails from the datasheet power table and decouple each with bulk ceramic capacitance plus 0.1uF high-frequency caps at every second VDD ball. Estimated: an 8Gb x8 DDR4-2400 component drawing roughly 300-500 mA average under active read/write bursts dissipates about 0.4-0.6 W - budget your 1.2V regulator (e.g., a buck such as TPS54218) accordingly with margin for write-charge transients.
Speed-bin and ordering-code mismatches are the top DDR4 substitution failure mode. The K4A8G085WC family spans 2400/2666/3200 MT/s bins (BCRC/BCTD/BIWE): physically identical 78-ball FBGA parts are not firmware drop-ins. Down-clocking a faster bin to a slower controller requires strict JEDEC timing validation in U-Boot or BIOS, per Samsung migration guidance. Additionally, never substitute an x16 organization (K4A8G165W) for an x8 part without controller rework - the DQ, DM, and DQS ball functions differ even though the mechanical package is identical.
The BCRC is rated 0C to +95C. DDR4 components rely on the ambient and self-refresh temperature (SRT) extended operating range flags configured by the controller; if your design operates above 85C ambient, verify the allowable refresh behavior and consider thermal vias under the FBGA package to spread heat into inner copper planes. Estimated: with ~0.5 W dissipation in a sealed enclosure, expect a 5-10C package-to-ambient rise depending on airflow; confirm your worst-case ambient keeps the die within the 95C rating.
合规信息
RoHS compliant per JLCPCB and LCSC product listings. REACH, halogen-free, and conflict minerals status not stated in provided data.
