K4A8G165WC-BCRC vs H5AN8G6NDJR-UHC 对比
详细并排对比 K4A8G165WC-BCRC 出自 Samsung Electronics 和 H5AN8G6NDJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WC-BCRC | H5AN8G6NDJR-UHC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $23.00 | $34.60 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 512M x 16 | 512M x 16 |
| 数据速率 | 2400 Mbps | — |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V |
| VPP Voltage | 2.5 V | — |
| 工作温度 | 0°C to +95°C (case) | — |
| 封装 | 96-ball FBGA (9mm x 13mm) | FBGA-96 (13x7.5 mm) |
| 接口 | 16-bit I/O | — |
| Banks | 16 (4 bank groups) | — |
| Burst Length | 8 (BL8) | — |
| CAS 延迟 | Programmable (e.g., 16, 17, 18) | — |
| Refresh | Temperature-compensated self-refresh (TCSR) | — |
| RoHS | Compliant | Compliant |
| 安装类型 | Surface Mount | — |
| Speed Grade | — | 3200 Mbps (PC4-25600) |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| JESD-30 Code | — | R-PBGA-B96 |
| Maximum Operating Temperature | — | 85 °C |
| Minimum Operating Temperature | — | 0 °C |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| Additional Features | — | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling |