K4A8G165WC-BCRC vs H5AN8G6NDJR-UHC Comparison
Detailed side-by-side comparison of K4A8G165WC-BCRC by Samsung Electronics and H5AN8G6NDJR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G165WC-BCRC | H5AN8G6NDJR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $23.00 | $34.60 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 2400 Mbps | — |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V |
| VPP Voltage | 2.5 V | — |
| Operating Temperature | 0°C to +95°C (case) | — |
| Package | 96-ball FBGA (9mm x 13mm) | FBGA-96 (13x7.5 mm) |
| Interface | 16-bit I/O | — |
| Banks | 16 (4 bank groups) | — |
| Burst Length | 8 (BL8) | — |
| CAS Latency | Programmable (e.g., 16, 17, 18) | — |
| Refresh | Temperature-compensated self-refresh (TCSR) | — |
| RoHS | Compliant | Compliant |
| Mounting Type | Surface Mount | — |
| Speed Grade | — | 3200 Mbps (PC4-25600) |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | RECTANGULAR |
| JESD-30 Code | — | R-PBGA-B96 |
| Maximum Operating Temperature | — | 85 °C |
| Minimum Operating Temperature | — | 0 °C |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| Additional Features | — | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling |