K4A8G165WG-BCWE vs MT40A512M16LY-062E AAT:E 对比
详细并排对比 K4A8G165WG-BCWE 出自 Samsung Electro-Mechanics 和 MT40A512M16LY-062E AAT:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electro-Mechanics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE ✓ 量产中Micron Technology
MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron
MT40A512M16LY-062E AAT:E ✓ 量产中规格对比
| 参数 | K4A8G165WG-BCWE | MT40A512M16LY-062E AAT:E |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $29.53 | $9.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | 8 Gbit (1 GB) |
| Memory Organization | 512M x 16 | 512M x 16 |
| 数据速率 | 3200 Mbps | — |
| 电源电压 | 1.2 V | 1.2 V |
| 工作温度范围 | 0°C to +85°C | — |
| Operating Current | 20 mA | — |
| 封装 | FBGA-96 | 96-FBGA (7.5 x 13.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Row Cycle Time (tRC) | 19 ns | — |
| Technology | B-die | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 生命周期状态 | Active | — |
| 接口 | — | Parallel |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 19 ns |
| Speed Grade | — | 062E |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| Package Height | — | [DATA_NEEDED: package max height] |
| MSL Rating | — | [DATA_NEEDED: moisture sensitivity level] |
| Ordering Code Suffix | — | AAT:E (temperature/package option per Micron code) |
| Moisture Packaging | — | [DATA_NEEDED: packing type for AAT:E suffix] |
| Data Rate Class | — | DDR4-3200 (062E speed bin) |