K4AAG165WA-BCRC vs H5ANAG8NAMR-UHC 对比

详细并排对比 K4AAG165WA-BCRC 出自 Samsung Electronics 和 H5ANAG8NAMR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4AAG165WA-BCRC K4AAG165WA-BCRC - 16Gb DDR4 SDRAM, FBGA-96 | Samsung | DRAM

K4AAG165WA-BCRC - 16Gb DDR4 SDRAM, FBGA-96 | Samsung | DRAM

K4AAG165WA-BCRC ✓ 量产中
SK hynix
H5ANAG8NAMR-UHC H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC ✓ 量产中

规格对比

参数 K4AAG165WA-BCRC H5ANAG8NAMR-UHC
品牌 Samsung Electronics SK hynix
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $64.90 $2.15
存储器类型 DDR4 SDRAM (Volatile DRAM) DDR4 SDRAM
存储容量 16 Gb (2 GB) —
Memory Organization 1G x 16 —
Memory Interface DDR4 SDRAM Interface —
电源电压 1.2 V 1.2 V
数据速率 up to 3200 Mbps per pin (family); [DATA_NEEDED: BCRC speed grade rating] DDR4-2400 (2400 MT/s)
Technology DDR4 —
封装 FBGA-96 (96-ball Fine-Pitch Ball Grid Array) FBGA-78
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: BCRC temperature range; family BCWE rated -40C to +95C] [DATA_NEEDED: operating temperature range]
Speed Grade Suffix -BCRC —
Datasheet Samsung K4AAG165WA DDR4 SDRAM Memory, 23 pages —
Packaging Status [DATA_NEEDED: tray/reel standard quantity] —
Clock Frequency [DATA_NEEDED: BCRC clock frequency] —
Memory Format DRAM —
RoHS 状态 unknown Compliant (lead-free FBGA package)
Manufacturer — SK Hynix
Density — 16 Gbit
存储组织 — 2G x 8
接口 — Parallel, DDR4
Bank Group Architecture — DDR4 bank-group architecture
On-Die Termination (ODT) — Yes
Refresh — Self-refresh and auto-refresh (DDR4)
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]
Applications — Data storage, firmware boot, industrial controllers, computing modules

数据手册与资源

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