K4B4G1646E-BYMA vs H5TC4G63MFR-PBA 对比
详细并排对比 K4B4G1646E-BYMA 出自 Samsung Electronics 和 H5TC4G63MFR-PBA 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646E-BYMA | H5TC4G63MFR-PBA |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $14.32 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35 V (1.28 V to 1.575 V) | — |
| Clock Frequency | 933 MHz | — |
| 数据速率 | 1866 Mbps/pin | 1866 Mbps (PC3L-14900) |
| 工作温度 | 0°C to +95°C | — |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| 封装 | FBGA-96 | 96-ball FBGA |
| 安装类型 | Surface Mount | — |
| RoHS | Compliant | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | [DATA_NEEDED: Burst Length] | BL8, BL4 (with burst chop) |
| 引脚数 | 96 | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |