K4RAH165VB-BCQK vs K4RBH165VB-BCQK 对比

详细并排对比 K4RAH165VB-BCQK 出自 Samsung Electronics 和 K4RBH165VB-BCQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RAH165VB-BCQK K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung

K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung

K4RAH165VB-BCQK ✓ 量产中
Samsung Electronics
K4RBH165VB-BCQK K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK ✓ 量产中

规格对比

参数 K4RAH165VB-BCQK K4RBH165VB-BCQK
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
存储器类型 DDR5 SDRAM DDR5 SDRAM
存储容量 16 Gb 16 Gb
Memory Organization 1G x 16 —
Memory Interface Parallel —
数据速率 4800 Mbps 4800 Mbps/pin
Supply Voltage (VDD) 1.1 V —
Error Correction On-die ECC On-chip (on-die) ECC
特性 Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration —
工作温度 0C to +85C 0 C to +85 C
封装 106-ball FBGA —
安装类型 Surface Mount Surface Mount
Memory Format DRAM (volatile) —
Packaging Tray —
生命周期状态 Active —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Unit Price [DATA_NEEDED: unit price] —
存储组织 — 1G x 16
Speed Grade — BCQK (4800 Mbps)
Self Refresh — Auto self-refresh
Reset Function — Asynchronous reset
Write Leveling — Yes
CRC Function — Yes
ZQ Calibration — Yes
电源电压 — [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5]
Package Type — [DATA_NEEDED: exact package code, expected FBGA surface mount]
Burst Length — [DATA_NEEDED: burst length (BL16 per DDR5 standard)]

数据手册与资源

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