K4RHE086VB-BCWM vs K4RCH046VM-2CLP 对比

详细并排对比 K4RHE086VB-BCWM 出自 Samsung Electronics 和 K4RCH046VM-2CLP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RHE086VB-BCWM K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM ✓ 量产中
Samsung Electronics
K4RCH046VM-2CLP K4RCH046VM-2CLP - 32Gb DDR5 SDRAM 6400Mbps | Samsung

K4RCH046VM-2CLP - 32Gb DDR5 SDRAM 6400Mbps | Samsung

K4RCH046VM-2CLP ✓ 量产中

规格对比

参数 K4RHE086VB-BCWM K4RCH046VM-2CLP
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $7.65 $10.10
存储器类型 DDR5 SDRAM DDR5 SDRAM
Density 24 Gb 32 Gb
存储组织 2G x 8 4G x 4
数据速率 5600 Mbps 6400 Mbps
电源电压 1.1 V 1.1 V
封装 82 FBGA 78-FBGA
安装类型 Surface Mount Surface Mount
接口 DDR5 (JEDEC) DDR5 (SSTL-style low-voltage signaling)
Configuration x8 x4 component
Application Segment Server / Data Center / Premium PC —
Manufacturer Samsung Semiconductor —
RoHS 状态 unknown [DATA_NEEDED: RoHS status]
工作温度 [DATA_NEEDED: operating temperature range] 0C to 85C
Access Time / CAS Latency [DATA_NEEDED: CAS latency] —
On-Die ECC [DATA_NEEDED: on-die ECC support] —
Package Height [DATA_NEEDED: package height] —
Family Speed Range (Samsung DDR5) — up to 7200 Mbps
Family Density Range (Samsung DDR5) — 16 Gb to 32 Gb
Power Efficiency vs DDR4 — Approx. 30% greater
Product Status (per distributor listing) — Sample / Active supply via distribution
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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